About MOSFET

Rohm MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RSR025N05FRATL


MOSFET, AEC-Q101, N-CH, 45V, 2.5A, TSMT3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 0
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USD 0.2475
Multiples of: 1

   N Channel               
RW1C020UNT2R


MOSFET SW MOSFET MID PWR N-CH 20V 2A
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ROHM Availability : 0
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USD 0.2498
Multiples of: 8000

2 A20 V75 mOhmsN - Channel 300 mV- 55 C+ 150 C700 mWSmd/SmtSOT - 563T - 6Cut TapeSi1 Channel10 V2 nCEnhancement  
RF4C050APTR


MOSFET Pch -20V -10A Middle Power MOSFET
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ROHM Availability : 0
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USD 0.2519
Multiples of: 1

10 A20 V65 mOhmsP - Channel 300 mV- 55 C+ 150 C2 WSmd/SmtDFN2020 - 8ReelSi1 Channel- 8 V55 nCEnhancement  
RZL035P01TR


MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -3.5A
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ROHM Availability : 0
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USD 0.2527
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3.5 A12 V26 mOhmsP - Channel 1 V- 55 C+ 150 C1 WSmd/SmtTUMT - 6ReelSi1 Channel10 V20 nCEnhancement  
SP8M6FRATB


MOSFET Nch+Pch 30V Vds 5A 3.9Qg SOP8
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USD 0.2535
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5 A , 3.5 A30 V36 mOhmsN - Channel, P - Channel 1 V + 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel10 v , - 10 V3.9 nC , 5.5 nCEnhancementAec - Q101 
RSD046P05TL


MOSFET 4V Drive Pch MOSFET Drive Pch
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ROHM Availability : 0
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USD 0.2541
Multiples of: 2500

4.5 A45 V110 mOhmsP - Channel 3 V- 55 C+ 150 C15 WSmd/SmtTO - 252 - 3Tape And ReelSi1 Channel20 V12 nCEnhancement  
US5U3TR


ROHM Semiconductor MOSFET 2.5V Drive N-Chan Sch Barrier Diode
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USD 0.2551
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1.5 A30 V240 mOhmsN - Channel  - 55 C+ 150 C1 WSmd/SmtSOT - 353T - 5Tape And ReelSi1 Channel12 V Enhancement  
RV4E031RPHZGTCR1


P-Channel 30 V 3.1A (Ta) 1.5W (Ta) Surface Mount, Wettable Flank DFN1616-6W
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USD 0.261
Multiples of: 3000

3.1 A30 V105 mOhmsP - Channel 2.5 V-+ 150 C1.5 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.8 nCEnhancementAEC - Q101 
RTL020P02TR


MOSFET P-CH 20V 2A TUMT6
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ROHM Availability : 0
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USD 0.2625
Multiples of: 3000

2 A- 30 V180 mOhmsP - Channel12 V   1 WSmd/SmtTUMT - 3Reel    Enhancement  
RTR025N03FRATL


ROHM Semiconductor
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ROHM Availability : 0
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USD 0.2644
Multiples of: 1

   N Channel               
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