About MOSFET

Transphorm MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TP65H480G4JSG-TR


N-Channel 650V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)
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USD 1.5577
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          3 - SMD , FLAT LEADDigi - Reel®Ganfet (Gallium Nitride)      
TP65H150G4LSG


MOSFET GAN FET 650V 13A TO220
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USD 3.0125
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13 A650 V180 mOhmsN - Channel 4.8 V- 55 C+ 150 C52 WSMD/SMT8X8 PQFN Si1 Channel- 20 V , + 20 V8 nCEnhancement  
TP65H035WS


MOSFET GAN FET 650V 46.5A TO247
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USD 16.7
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46.5 A650 V41 mOhmsN - Channel 3.3 V- 55 C+ 150 C156 WThrough HoleTO - 247 - 3 Gan Si1 Channel20 V36 nCEnhancement  
TP65H050G4WS


MOSFET GAN FET 650V 34A TO247
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Transphorm 778
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USD 11.25
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34 A650 V60 mOhmsN - Channel 4.8 V- 55 C+ 150 C119 WSMD/SMTTO - 247 - 3BulkSi1 Channel- 20 V , + 20 V24 nCEnhancement  
TP90H050WS


MOSFET GAN FET 900V 34A TO247
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USD 13.25
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TP65H035WSQA


MOSFET GAN FET 650V 47.2A TO247
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Transphorm 579
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USD 17.8125
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47.2 A650 V41 mOhmsN - Channel 3.4 V- 55 C+ 175 C187 WThrough HoleTO - 247 - 3 Gan Si1 Channel20 V24 nCEnhancement  
TP65H050WSQA


MOSFET GAN FET 650V 36A TO247
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USD 14.55
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TP65H035G4WS


MOSFET GAN FET 650V 46.5A TO247
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USD 13.9125
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TP65H050WS


MOSFET GAN FET 650V 34A TO247
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Transphorm 388
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USD 13.7
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36 A650 V60 mOhmsN - Channel 3.3 V- 55 C+ 150 C119 WThrough HoleTO - 247 - 3 Gan Si1 Channel20 V24 nCEnhancement  
TP65H050G4BS


MOSFET 650V, 50mOhm
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USD 9.8125
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34 A650 V60 mOhmsP - Channel 4.8 V- 55 C+ 150 C119 WSMD/SMTTO - 263 - 3BulkSi1 Channel- 20 V , + 20 V16 nCEnhancement  
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