TP65H050G4BS 650V SuperGaN FET in TO-263 (source tab) Description Features The TP65H050G4BS 650V, 50 m gallium nitride (GaN) FET JEDEC qualified GaN technology is a normally-off device using Transphorms Gen IV platform. Dynamic R production tested DS(on)eff It combines a state-of-the-art high voltage GaN HEMT with a Robust design, defined by low voltage silicon MOSFET to offer superior reliability and Wide gate safety margin performance. Transient over-voltage capability Enhanced inrush current capability The Gen IV SuperGaN platform uses advanced epi and Very low Q RR patented design technologies to simplify manufacturability Reduced crossover loss while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery Benefits charge. Enables AC-DC bridgeless totem-pole PFC designs Increased power density Related Literature Reduced system size and weight AN0009: Recommended External Circuitry for GaN FETs Overall lower system cost AN0003: Printed Circuit Board Layout and Probing Achieves increased efficiency in both hard- and soft- switched circuits Ordering Information Easy to drive with commonly-used gate drivers Package GSD pin layout improves high speed design Part Number Package Configuration Applications TP65H050G4BS TO-263 Source Tab Datacom Broad industrial PV inverter TP65H050G4BS Servo motor TO-263 (top view) Key Specifications S V (V) 650 DSS G V(V) 800 DSS(TR) S D R (m ) max* 60 DS(on)eff Q (nC) typ 120 RR Q (nC) typ 16 G * Dynamic on-resistance see Figures 18 and 19 Cascode Schematic Symbol Cascode Device Structure Oct. 13, 2021 2018 Transphorm Inc. Subject to change without notice. tp65h050g4bs.1.0 1 TP65H050G4BS Absolute Maximum Ratings (T =25C unless otherwise stated.) c Symbol Parameter Limit Value Unit VDSS Drain to source voltage (TJ = -55C to 150C) 650 a VDSS(TR) Transient drain to source voltage 800 V VGSS Gate to source voltage 20 P Maximum power dissipation T =25C 119 W D C b Continuous drain current T =25C 34 A C ID b Continuous drain current T =100C 22 A C IDM Pulsed drain current (pulse width: 10s) 150 A T Case -55 to +150 C C Operating temperature TJ Junction -55 to +150 C T Storage temperature -55 to +150 C S c T Soldering peak temperature 260 C SOLD Notes: a. In off-state, spike duty cycle D<0.01, spike duration <30s, non repetitive b. For increased stability at high current operation, see Circuit Implementation on page 3 c. Reflow MSL3 Thermal Resistance Symbol Parameter Maximum Unit R Junction-to-case 1.05 C/W JC RJA Junction-to-ambient 40 C/W Oct. 13, 2021 transphormusa.com tp65h050g4bs.1v0 2