About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Si2347DS-T1-GE3


Vishay Semiconductors MOSFET -30V .042Ohm10V 5A P-Ch G-III
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Vishay Availability : 330312
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USD 0.0725

Multiples of: 1

- 3.9 A- 30 V68 mOhmsP - Channel - 1 v to - 2.5 V- 55 C+ 150 C1.7 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V6.9 nCEnhancement Trenchfet
DMG9933USD-13


Diodes Incorporated MOSFET N-Ch Dual MOSFET 20V VDSS 12V VGSS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 324950
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USD 0.1535

Multiples of: 2500

4.6 A20 V55 mOhms , 55 mOhmsp - channel 1.1 V- 55 C+ 150 C1.15 Wsmd/smtSO - 8Tape And Reelsi2 channel12 V6.5 nC , 6.5 nCenhancement  
BSS314PEH6327XTSA1


Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; PG-SOT23
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Infineon Availability : 314598
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USD 0.0725

Multiples of: 1

            Optimos P3      
2N7002KQ-7


MOSFET N Trench 60V 380mA 2.5V @ 1mA 2 Ω @ 500mA,10V SOT-23 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 314280
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USD 0.0382

Multiples of: 3000

                   
FDC6321C


Transistor: N/P-MOSFET; unipolar; 25/-25V; 0.68/0.46A; 0.9W
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ON Semiconductor Availability : 305550
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USD 0.2192

Multiples of: 3000

                   
NX3008PBK,215


P-Channel 30 V 230mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB
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Nexperia Availability : 302640
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USD 0.0265

Multiples of: 3000

230 mA30 V4.1 OhmsP - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel- 4.5 V0.55 nCEnhancement  
NDC7001C


Transistor: N/P-MOSFET; unipolar; 60/-60V; 0.51/0.34A; 0.96W
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ON Semiconductor Availability : 293910
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USD 0.156

Multiples of: 3000

                   
AO3401A


MOSFET P Trench 30V 4A 1.3V @ 250uA 44 mΩ @ 4.3A,10V SOT-23-3L RoHS
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Alpha & Omega Availability : 293479
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USD 0.0379

Multiples of: 10

4 A  P    1.4 WSurface Mount      Enhancement  
DMC25D0UVT-7


MOSFET 20V Enh Mode FET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Diodes Incorporated Availability : 291000
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USD 0.1535

Multiples of: 3000

400 mA , - 2.6 A25 v , - 30 V4 Ohms , 300 mOhmsN - Channel, P - Channel 650 mV , - 500 mV- 55 C+ 150 C1.2 WSmd/SmtTSOT - 26 - 6ReelSi2 Channel8 v , 12 V0.7 nC , 21 nCEnhancement  
NDS355AN


Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.5W; SOT23
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ON Semiconductor Availability : 291000
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USD 0.182

Multiples of: 3000

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