About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
PJE8408_R1_00001


MOSFET /E08/TR/7"/HF/4K/SOT-523/MOS/SOT/NFET-20TBMN/NF20TB-QI08/PJ///
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Panjit Availability : 249587
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USD 0.075
Multiples of: 1

500 mA20 V3 OhmsN - Channel 900 mV- 55 C+ 150 C300 mWSMD/SMTSOT - 523 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V1.4 nCEnhancement  
2N7002,215


MOSFET N-CH TRNCH 60V 300MA
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Nexperia Availability : 249040
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USD 0.0122
Multiples of: 20

300 mA60 V2.8 OhmsN - Channel30 V1 V- 65 C+ 150 C830 mWSmd/SmtSOT - 23 - 3ReelSi1 Channel10 V Enhancement  
NX7002AKS,115


NXP Semiconductors MOSFET 60 V, single N-chan Trench MOSFET
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Nexperia Availability : 247132
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USD 0.038
Multiples of: 1

170 mA60 V3 OhmsN - Channel 1.6 V- 55 C+ 150 C1.06 WSmd/SmtTSSOP - 6ReelSi2 Channel 0.33 nCEnhancement  
AO3400


SOT-23 MOSFETs ROHS
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Microdiode Electronics Availability : 242568
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USD 0.0173
Multiples of: 20

                   
PMV213SN,215


Transistor: N-MOSFET; 100V; 1.2A; Idm: 7.6A; 2W; SOT23-3
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Nexperia Availability : 241027
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USD 0.1449
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtTO - 236ABReel       
SSM3K36MFV,L3F


Toshiba MOSFET Small-signal FET 0.5A 20V 46pF 1.52
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Toshiba Availability : 240560
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USD 0.0608
Multiples of: 8000

500 mA20 V630 mOhmsN - Channel 350 mV + 150 C150 mWSmd/SmtSOT - 723 - 3ReelSi1 Channel5 V1.23 nCEnhancement  
SQJ479EP-T1_BE3


MOSFET P-CHANNEL 80-V (D-S) 175C MOSFET
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Vishay Availability : 240139
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USD 0.636
Multiples of: 1

32 A80 V33 mOhmsP - Channel 2.5 V- 55 C+ 175 C68 WSMD/SMTPOWERPAK - SO - 8 - 4Cut Tape , ReelSi1 Channel- 20 V , + 20 V90 nCEnhancement  
RJK0651DPB-00#J5


Trans MOSFET N-CH 60V 25A 5-Pin(4+Tab) LFPAK T/R
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Renesas Availability : 231090
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USD 0.896
Multiples of: 1

         Smd/SmtLFPAK - 5Cut TapeSi      
SI2318DS-T1-E3


40V 3A 750mW 45mO@10V,3.9A N Channel SOT-23 MOSFETs ROHS
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Vishay Availability : 230803
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USD 0.1667
Multiples of: 1

3.9 A40 V45 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtTO - 236 - 3ReelSi1 Channel10 V15 nCEnhancement Trenchfet
IRF7493TRPBF


MOSFET N Trench 80V 9.3A 4V @ 250uA 15 mΩ @ 5.6A,10V SOIC-8_150mil RoHS
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Infineon Availability : 1869
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USD 0.6508
Multiples of: 1

9.2 A80 V15 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V31 nC   
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