IRF7493PbF HEXFET Power MOSFET Applications V R max Qg (typ.) DSS DS(on) High frequency DC-DC converters Lead-Free 15m V =10V 80V 35nC GS Benefits Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D Fully Characterized Capacitance Including 2 7 S D Effective C to Simplify Design, (See OSS 3 6 S D App. Note AN1001) 4 5 Fully Characterized Avalanche Voltage G D and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 80 V DS V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V GS 9.3 D C I T = 70C Continuous Drain Current, V 10V GS 7.4 A D C Pulsed Drain Current I 74 DM Maximum Power Dissipation P T = 25C 2.5 W D C Maximum Power Dissipation P T = 70C 1.6 D C Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Thermal Resistance Parameter Typ. Max. Units R Junction-to-Lead 20 JC Junction-to-Ambient R JA 50 Notes through are on page 9 www.irf.com 1 IRF7493PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 80 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 0.074 mV/C Reference to 25C, I = 1mA D R m DS(on) Static Drain-to-Source On-Resistance 11.5 15 V = 10V, I = 5.6A GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 80V, V = 0V DSS DS GS 250 V = 64V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Dynamic T = 25C (unless otherwise specified) J gfs Forward Transconductance 13 S V = 15V, I = 5.6A DS D Q g Total Gate Charge 35 53 I = 5.6A D Q gs Gate-to-Source Charge 5.7 V = 40V DS Q gd Gate-to-Drain Charge 12 V = 10V GS t Turn-On Delay Time 8.3 V = 40V, d(on) DD t Rise Time 7.5 I = 5.6A r D t Turn-Off Delay Time 30 ns R = 6.2 d(off) G t f Fall Time 12 V = 10V GS C iss Input Capacitance 1510 V = 0V GS C oss Output Capacitance 320 pF V = 25V DS C Reverse Transfer Capacitance 130 = 1.0MHz rss C Output Capacitance 1130 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 210 V = 0V, V = 64V, = 1.0MHz oss GS DS C eff. rss Effective Output Capacitance 320 V = 0V, V = 0V to 64V GS DS Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E AS 180 mJ Avalanche Current I 5.6 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current 9.3 MOSFET symbol (Body Diode) A showing the I Pulsed Source Current 74 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 5.6A, V = 0V SD J S GS t rr Reverse Recovery Time 37 56 ns T = 25C, I = 5.6A, V = 15V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 52 78 nC 2 www.irf.com