About MOSFETs

On Semiconductor MOSFETs

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Image  Information Image Stock Code(▲▼)Description
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDMS1D5N03


MOSFET PT9 30V/12V Nch PowerTrench SyncFET
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USD 0.9823

Multiples of: 1

218 A30 V900 uOhmsN - Channel 800 mV- 55 C+ 150 C83 WSmd/SmtPOWER - 56 - 8Cut TapeSi1 Channel16 V139 nCEnhancement  
FQP8N90C


Fairchild Semiconductor MOSFET 900V N-Ch Q-FET advance C-Series
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USD 0.9823

Multiples of: 7

6 A900 V1.9 Ohmsn - channel30 V - 55 C+ 150 C171 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
NDS8425


MOSFET N-Channel MOSFET 2.5V Specified
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USD 0.9835

Multiples of: 442

7.4 A20 V15 mOhmsn - channel  - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel8 V enhancement powertrench
FQP7N80C


MOSFET 800V N-Ch Q-FET advance C-Series
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USD 0.9837

Multiples of: 1000

6.6 A800 V1.9 Ohmsn - channel  - 55 C+ 150 C167 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement qfet
FDMS86252


MOSFET 150V N-Channel PowerTrench MOSFET
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USD 0.9868

Multiples of: 377

16 A150 V51 mOhmsn - channel 2.8 V- 55 C+ 150 C69 Wsmd/smtPOWER 56Reelsi1 channel20 V6.1 nC  powertrench
NTD5862N-1G


MOSFET NFET IPAK 60V 102A 6MOHM
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USD 0.9875

Multiples of: 1

                   
NVMD3P03R2G


MOSFET PFET SO8 30V 3A 85 MOHM
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USD 0.9882

Multiples of: 439

3.05 A30 V85 mOhmsP - Channel     Smd/SmtSOIC - 8Cut TapeSi    Aec - Q101 
IRFP150A


MOSFET 100V N-Channel A-FET
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USD 0.9896

Multiples of: 450

43 A100 V40 mOhmsn - channel20 V - 55 C+ 175 C193 Wthrough holeTO - 3P - 3Tube    enhancement  
FQP70N10


MOSFET 100V N-Channel QFET
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USD 0.9899

Multiples of: 1

   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
FDPF12N50NZ


MOSFET UNIFET2 500V N-CH MOSFET SINGLE GAGE
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USD 0.9914

Multiples of: 1

11.5 A500 V460 mOhmsn - channel 5 V- 55 C+ 150 C42 Wthrough holeTO - 220 - 3 FPTubesi1 channel25 V23 nC  unifet
FDMS7560S


MOSFET 25V N-Channel PowerTrench SyncFET
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USD 0.9927

Multiples of: 454

30 A25 V1.2 mOhmsn - channel 1.7 V  2.5 Wsmd/smtPOWER 56Reelsi1 channel20 V66 nC  powertrench syncfet
NVD5C478NLT4G


MOSFET T6 40V DPAK EXP
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USD 0.9966

Multiples of: 2500

           Cut Tape       
FDWS9408_F085


MOSFET N-Channel Power Trench MOSFET
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USD 1.0006

Multiples of: 1

80 A40 V1.5 mOhmsn - channel 2 V- 55 C+ 175 C214 Wsmd/smtPOWER56 - 8Reelsi1 channel+/- 20 V92 nCenhancement  
FCPF250N65S3R0L-F154


MOSFET SUPERFET3 650V TO220F PKG
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USD 1.0074

Multiples of: 1

12 A650 V250 mOhmsN - Channel 4.5 V- 55 C+ 150 C31 WThrough Hole  Si1 Channel- 30 V , + 30 V24 nCEnhancement  
NTMFS5C426NT1G


MOSFET T6D3F 40V NFET
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USD 1.0075

Multiples of: 1

235 A40 V1.1 mOhmsn - channel 2.5 V- 55 C+ 175 C128 Wsmd/smtSO - FL - 8Cut Tapesi1 channel20 V65 nCenhancement  
FDB8444_F085


Fairchild Semiconductor MOSFET 40V N-Ch PowerTrench
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USD 1.0103

Multiples of: 800

70 A40 V3.9 mOhmsn - channel20 V - 55 C+ 175 C167 Wsmd/smtD2PAK - 3Reel    enhancement  
FQB8N90CTM


Fairchild Semiconductor MOSFET
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USD 1.013

Multiples of: 800

6.3 A900 V1.6 Ohmsn - channel 5 V- 55 C+ 150 C171 Wsmd/smtTO - 263 - 3Reelsi1 channel30 V35 nCenhancement qfet
NVMFD5852NLWFT1G


MOSFET Pwr MOSFET 40V 44A 6.9mOhm Dual N-CH
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USD 1.014

Multiples of: 1

44 A40 V5.3 mOhms , 5.3 mOhmsN - Channel 1.4 V- 55 C+ 175 C27 WSmd/SmtDFN - 5X6 - 8Cut TapeSi2 Channel20 V36 nC , 36 nCEnhancementAec - Q101 
NTMFS6H836NT1G


MOSFET T8 80V SO8FL
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USD 1.0171

Multiples of: 1500

80 A80 V6.7 mOhmsN - Channel     Smd/SmtSO - 8Cut TapeSi1 Channel  Enhancement  
FCP11N60F


MOSFET 600V NCH MOSFET
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USD 1.0173

Multiples of: 50

11 A600 V380 mOhmsn - channel  - 55 C+ 150 C125 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement superfet frfet
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