About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMD4184PFR2G


MOSFET PFET FTKY S08 30V TR 3.8A
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USD 1.3073

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4 A30 V95 mOhmsP - Channel  - 55 C+ 150 C2.31 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement  
Hot FDP39N20


Fairchild Semiconductor MOSFET SINGLE N-CH 200V ULTRAFET TRENCH
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USD 1.3428

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39 A200 V66 mOhmsN - Channel30 V - 55 C+ 150 C251 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement  
NTMFS1D15N03CGT1G


MOSFET WIDE SOA
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USD 1.4045

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NTTFD018N08LC


80V 18mΩ@7.8A,10V 2.5V@44uA 2 N-Channel WQFN-12(3.3x3.3) MOSFETs ROHS
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USD 2.4937

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NVD5C434NT4G


MOSFET T6 40V SL IN DPAK
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USD 2.6914

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163 A40 V1.7 mOhmsN - Channel 2 V- 55 C+ 175 C117 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V80.6 nCEnhancementAec - Q101 
NTMFS5C406NLT1G


MOSFET Single N-Chn Pwr Mosfet 40V
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USD 4.6125

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NVMTS1D1N04CTXG


MOSFET T6 40V SL AIZU SINGLE NCH PQFN 8X8
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ON Semiconductor Availability : 48
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USD 5.5871

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715123AB


2N7000 S.S NCH TMOS FE* T/HOLE
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USD 0.1342

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200 mA60 V1.2 OhmsN - Channel20 V - 55 C+ 150 C400 mWThrough HoleTO - 92 - 3Bulk    Enhancement  
FCD600N60Z


Fairchild Semiconductor MOSFET 600V N-Channel MOSFET
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USD 0.9315

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7.4 A650 V600 mOhmsN - Channel 3.5 V- 55 C+ 150 C89 WSmd/SmtDPAK - 3ReelSi1 Channel20 V20 nC  Superfet Ii
FQD17N08LTM


Fairchild Semiconductor MOSFET 80V N-Channel QFET Logic Level
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USD 0.3971

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12.9 A80 V100 mOhmsN - Channel20 V - 55 C+ 150 C2.5 WSmd/SmtDPAK - 2ReelSi1 Channel20 V Enhancement  
FDS6892A


20V 7.5A 18mO@4.5V,7.5A 900mW 2 N-Channel SOIC-8 MOSFETs ROHS
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USD 0.3724

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7.5 A20 V18 mOhmsn - channel  - 55 C+ 150 C2 Wsmd/smtSOIC - 8 NarrowReelsi2 channel12 V enhancement powertrench
NVMFS5C468NLAFT1G


DFN-5(5.9x4.9) MOSFETs ROHS
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USD 0.7393

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NVTFS014P04M8LTAG


MOSFET MV8 P INITIAL PROGRAM
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ON Semiconductor Availability : 43
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USD 0.7855

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           Cut Tape       
FCH040N65S3-F155


MOSFET SuperFET3 650V 40 mOhm
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USD 12.0426

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65 A650 V35.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C417 WThrough HoleTO - 247 - 3 Si1 Channel30 V136 nCEnhancement Superfet Iii
NVTFWS9D6P04M8LTAG


MOSFET MV8 P INITIAL PROGRAM
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ON Semiconductor Availability : 42
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USD 0.6167

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           Cut Tape       
NTMFD016N06CT1G


MOSFET T6 60V SG HIGHER RDS-ON PORTFOLIO
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ON Semiconductor Availability : 42
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USD 1.0541

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FDMC86183


MOSFET PTNG 100/20V Nch Trench Mosfet
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ON Semiconductor Availability : 42
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USD 1.2668

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47 A100 V11 mOhmsN - Channel 2 V- 55 C+ 150 C52 WSmd/SmtPOWER - 33 - 8Cut TapeSi1 Channel20 V21 nCEnhancement  
FDMS039N08B


Power-56 MOSFETs ROHS
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USD 1.3129

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19.4 A80 V3.2 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER 56ReelSi1 Channel20 V   Powertrench
FDP060AN08A0


MOSFET 75V 80a .6Ohms/VGS=1V
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USD 2.4844

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   N Channel      TO - 220 - 3Tube       
FDP22N50N


Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
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USD 3.2211

Multiples of: 1

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