About MOSFETs

On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCPF250N65S3R0L


N-Channel SuperFET III MOSFET 650V 12A 250mOhm 3-Pin TO-220F Tube
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USD 0.8614

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12 A650 V250 mOhmsN - Channel 2.5 V- 55 C+ 150 C31 WThrough HoleTO - 220F - 3TubeSi1 Channel30 V24 nCEnhancement  
Hot FDPF12N60NZ


MOSFET UNIFET2 600V N-CH MOSFET SINGLE GAGE
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USD 1.1965

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   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
MTD3055VL


MTD3055VL TMOS PWR FET 60V 0.
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USD 0.6235

Multiples of: 1

12 A60 V180 mOhmsn - channel  - 55 C+ 175 C3.9 Wsmd/smtDPAK - 3Reel  20 V enhancement  
FDMC9430L_F085


MOSFET 40V Dual NChnl LL PowerTrench MOSFET
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USD 1.0783

Multiples of: 1

12 A , 12 A40 v , 40 V6.3 mOhms , 6.3 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C11.4 WSmd/SmtPOWER33 - 8ReelSi2 Channel+/- 12 v , +/- 12 V22 nC , 22 nCEnhancement Syncfet
FDD9409-F085


MOSFET N-channel Power Trench MOSFET
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USD 1.6917

Multiples of: 1

90 A40 V3.2 mOhmsN - Channel 3.2 V- 55 C+ 175 C150 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V42 nCEnhancement Powertrench
FQA70N10


Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
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USD 1.7287

Multiples of: 1

            Qfet®      
NDUL03N150CG


MOSFET Pwr MOSFET 1500V 25A 10.5Ohm N-CH
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USD 2.2749

Multiples of: 1

2.5 A1.5 kV8 Ohmsn - channel    3 Wthrough holeTO - 3PF - 3Tubesi1 channel 34 nC   
NTMFSC4D2N10MC


N-Channel 100V 29.6A (Ta), 116A (Tc) 7.9W (Ta), 122W (Tc) Surface Mount 8-DFN (5.1x6.15)
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USD 2.7204

Multiples of: 1

          8 - PowervdfnDigi - Reel®Mosfet (Metal Oxide)      
FDMS003N08C


MOSFET FET 80V 147A 3.1 mOhm
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USD 5.8375

Multiples of: 1

                   
FCH47N60_F133


Transistor: N-MOSFET; unipolar; 600V; 47A; 417W; TO247
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USD 12.9856

Multiples of: 1

            Superfet®      
NTH4L040N65S3F


MOSFET FRFET 650 V 65 A 40 mOhm TO-247
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USD 20.4389

Multiples of: 1

           Tube       
NTMS4816NR2G


MOSFET NFET SO8 30V 11A NCH 0.030R
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USD 0.2461

Multiples of: 1

11 A30 V12.7 mOhmsN - Channel  - 55 C+ 150 C2.04 WSmd/SmtSOIC - 8ReelSi1 Channel20 V Enhancement  
FDFS2P753Z


MOSFET -30V -3A 115 OHM PowerTrenchAr MOSFET
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USD 0.3145

Multiples of: 1

3 A30 V115 mOhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSO - 8ReelSi1 Channel25 V Enhancement Powertrench
NTP2955G


MOSFET -60V -12A P-Channel
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USD 0.3283

Multiples of: 1

2.4 A60 V196 mOhmsP - Channel 2 V- 55 C+ 175 C62.5 WThrough HoleTO - 220 - 3TubeSi1 Channel- 10 V14 nCEnhancement  
NTD3055L104-1G


MOSFET 60V 12A N-Channel
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USD 0.4525

Multiples of: 1

   N - Channel  - 55 C+ 175 C Through HoleDPAK - 3Tube       
IRL640A


MOSFET 200V N-Channel a-FET Logic Level
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USD 0.7459

Multiples of: 1

18 A200 V180 mOhmsN - Channel  - 55 C+ 150 C110 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
ATP113-TL-H


60V 35A 29.5m@18A,10V 50W 1PCSPChannel ATPAK-3 MOSFETs ROHS
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USD 1.1755

Multiples of: 1

                   
FDD5612


Transistor: N-MOSFET; unipolar; 60V; 18A; 42W; DPAK
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USD 2.2143

Multiples of: 1

            Powertrench®      
FDMC86184


N-Channel Shielded Gate PowerTrench MOSFET 100V 53A 8.5mOhm 8-Pin PQFN T/R
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USD 1.1272

Multiples of: 1

57 A100 V6.4 mOhmsN - Channel 2 V- 55 C+ 150 C54 WSmd/SmtPOWER - 33 - 8Cut TapeSi1 Channel20 V30 nCEnhancement  
NVB110N65S3F


MOSFET SUPERFET3 650V D2PAK PKG
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USD 4.9863

Multiples of: 1

30 A650 V110 mOhmsN - Channel 3 V- 55 C+ 150 C240 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel30 V58 nCEnhancementAec - Q101 
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