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On Semiconductor MOSFETs

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HUF76609D3ST


MOSFET 10a 100V 0.165 Ohm 1Ch HS Logic Gate
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USD 0.4502

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   n - channel  - 55 C+ 175 C smd/smtTO - 252AAReel       
NTPF125N65S3H


MOSFET SUPERFET3 FAST 125MOHM TO-220F
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USD 2.6716

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FDD7N25LZTM


MOSFET 250V N-Channel MOSFET, UniFET
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USD 0.5038

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6.2 A250 V430 mOhmsN - Channel   + 150 C56 WSmd/SmtDPAKReelSi1 Channel 12 nC   
FDP3632


Transistor: N-MOSFET; unipolar; 100V; 12A; 310W; TO220AB
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USD 3.1344

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Hot NTD4804NT4G


ON Semiconductor MOSFET NFET 30V 117A 4MOHM
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USD 0.6372

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117 A30 V4 mOhmsN - Channel20 V - 55 C+ 175 C2.5 WSmd/SmtDPAK - 3Reel    Enhancement  
NVMFS027N10MCLT1G


MOSFET PTNG 100V LL SO8FL
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ON Semiconductor Availability : 22
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USD 0.6412

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FQP8P10


MOSFET 100V P-Channel QFET
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USD 0.6926

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   P - Channel  - 55 C+ 175 C Through HoleTO - 220 - 3Tube       
Hot NDP6060


MOSFET N-Channel FET Enhancement Mode
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USD 1.0682

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48 A60 V25 mOhmsN - Channel  - 65 C+ 175 C100 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V Enhancement  
FQA8N90C_F109


Fairchild Semiconductor MOSFET 900V N-Channel
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USD 1.5913

Multiples of: 1

8 A900 V1.9 OhmsN - Channel  - 55 C+ 150 C240 WThrough HoleTO - 3P - 3TubeSi1 Channel30 V Enhancement Qfet
NVTR4503NT1G


MOSFET NFET SOT23 30V 2A 0.110R
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USD 0.0822

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2.5 A30 V110 mOhmsN - Channel 1 V- 55 C+ 150 C730 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V3.6 nCEnhancementAec - Q101 
FDS6682


30V 14A 7.5mO@10V,14A 2.5W N Channel SOIC-8 MOSFETs ROHS
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ON Semiconductor Availability : 19
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USD 0.5188

Multiples of: 1

14 A30 V5.7 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSOIC - 8 NarrowReelSi1 Channel20 V Enhancement Powertrench
FQPF33N10


Trans MOSFET N-CH 100V 18A 3-Pin(3+Tab) TO-220F Tube
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ON Semiconductor Availability : 19
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USD 0.6375

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   n - channel  - 55 C+ 175 C through holeTO - 220FTube       
NTD4302T4G


ON Semiconductor MOSFET 30V 68A N-Channel
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ON Semiconductor Availability : 19
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USD 0.753

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68 A30 V7.8 mOhmsN - Channel20 V - 55 C+ 150 C75 WSmd/SmtDPAK - 3ReelSi1 Channel20 V Enhancement  
RFP50N06


RFP50N06 POWER MOSFET T/HOLE
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ON Semiconductor Availability : 19
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USD 0.8589

Multiples of: 1

50 A60 V22 mOhmsn - channel  - 55 C+ 175 C131 Wthrough holeTO - 220 - 3Tube  20 V enhancement  
NTD5862NT4G


ON Semiconductor MOSFET NFET DPAK 60V 102A 6MOHM
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ON Semiconductor Availability : 19
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USD 1.2314

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98 A60 V5.7 mOhmsN - Channel  - 55 C+ 175 C115 WSmd/SmtDPAK - 3ReelSi1 Channel20 V82 nC   
NVTFS5C673NLWFTAG


MOSFET T6 60V NCH LL U8FL WF
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ON Semiconductor Availability : 19
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USD 1.3191

Multiples of: 1

50 A60 V8.1 mOhmsN - Channel 1.2 V- 55 C+ 175 C46 W  Cut TapeSi1 Channel10 V9.5 nCEnhancementAec - Q101 
NVMFD5C470NLT1G


MOSFET T6 40V LL S08FL DS
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USD 1.5135

Multiples of: 1

36 A40 V9.2 mOhms , 9.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C24 WSmd/SmtDFN - 8Cut TapeSi2 Channel20 V9 nC , 9 nCEnhancementAec - Q101 
NTD360N65S3H


MOSFET SUPERFET3 FAST 360MOHM DPAK
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USD 1.6185

Multiples of: 1

10 A650 V360 mOhmsN - Channel 4 V- 55 C+ 150 C83 WSMD/SMTDPAK - 3 Si1 Channel- 30 V , + 30 V17.5 nCEnhancement  
NDP6060L


Transistor: N-MOSFET; unipolar; 60V; 48A; 100W; TO220AB
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USD 1.7212

Multiples of: 1

   N Channel               
FDMS4D4N08C


Transistor: N-MOSFET; unipolar; 80V; 78A; Idm: 498A; 125W; Power56
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USD 1.8567

Multiples of: 1

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