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Image  Information Image Stock Code(▲▼)Description
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDP023N08B-F102


MOSFET FET 75V 2.35 MOHM TO220
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USD 2.5132

Multiples of: 1

                   
FQU1N80TU


Fairchild Semiconductor MOSFET 800V Single
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USD 0.4025

Multiples of: 1

1 A800 V20 Ohmsn - channel30 V - 55 C+ 150 C2.5 Wthrough holeIPAK - 3Tubesi1 channel30 V enhancement  
FDS8690


Fairchild Semiconductor MOSFET 30V 14A 7.6 OHM NCH POWER
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USD 0.7383

Multiples of: 1

14 A30 V6.3 mOhmsn - channel20 V - 55 C+ 150 C2.5 Wsmd/smtSOIC - 8 NarrowReelsi1 channel20 V enhancement powertrench
FDMA510PZ


MOSFET -20V Single P-Chan PowerTrench
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USD 0.8357

Multiples of: 1

7.8 A20 V30 mOhmsp - channel  - 55 C+ 150 C2.4 Wsmd/smtMICRO - FETReelsi1 channel8 V enhancement powertrench
FQP2N90


MOSFET 900V N-Channel QFET
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USD 0.8683

Multiples of: 1

   n - channel  - 55 C+ 150 C through holeTO - 220 - 3Tube       
FDD8782


MOSFET 25V N-Channel PowerTrench MOSFET
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USD 1.4479

Multiples of: 1

35 A25 V8.5 mOhmsn - channel  - 55 C+ 175 C50 Wsmd/smtTO - 252Reelsi1 channel20 V enhancement powertrench
FDPF10N60ZUT


MOSFET 600V 9A N-Chan FRFET UniFET
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USD 1.6931

Multiples of: 1

9 A600 V650 mOhmsn - channel 5 V  42 Wthrough holeTO - 220Tubesi1 channel30 V31 nC  unifet frfet
FCP290N80


MOSFET 800V SuperFET2 N-Chnl Mosfet
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USD 1.9954

Multiples of: 1

17 A800 V290 mOhmsn - channel 2.5 V- 55 C+ 150 C212 Wthrough holeTO - 220 - 3Bulksi1 channel+/- 20 v , +/- 30 V58 nCenhancement superfet ii
FDMS7700S


MOSFET 30V Dual N-Channel PowerTrench
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USD 2.0883

Multiples of: 1

30 A , 40 A30 V7.5 mOhms , 2.4 mOhmsn - channel 1.8 v , 1.5 V  1 Wsmd/smtPOWER 56Reelsi2 channel20 V20 nC , 105 nC  powertrench syncfet
NTMFS5C404NLT1G


MOSFET NFET SO8FL 40V 373A 750MO
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USD 2.4336

Multiples of: 1

         Smd/SmtSO - FL - 8Cut TapeSi      
FDMC86570L


Fairchild Semiconductor MOSFET 60V N Chan Shielded Gate Power Trench
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USD 2.438

Multiples of: 1

56 A60 V6.5 mOhmsn - channel 3 V- 55 C+ 150 C54 Wsmd/smtPOWER - 33 - 8Reelsi1 channel 88 nC  powertrench power clip
NVMFS3D6N10MCLT1G


MOSFET Single N-Channel Power MOSFET 100 V 131 A 3.6mO
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USD 2.4452

Multiples of: 1

           Cut Tape       
FDS8958A_F085


MOSFET SO8DUAL NCH & PCH POWER TRENCH MOSFET
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USD 2.5674

Multiples of: 1

7 A , 5 A30 V28 mOhms , 52 mOhmsn and p - channel   + 150 C2 Wsmd/smtSOIC - 8Reelsi2 channel20 V   powertrench
FDP047N10


MOSFET 100V N-Channel PowerTrench
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USD 2.6481

Multiples of: 1

   n - channel  - 55 C+ 175 C through holeTO - 220 - 3Tube       
NTB5D0N15MC


MOSFET PTNG 150V N-FET D2PAK
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USD 3.8919

Multiples of: 1

139 A150 V5 mOhmsN - Channel 4.5 V- 55 C+ 175 C214 WSMD/SMTSC - 70 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V75 nCEnhancement  
FDMD8680


MOSFET 80V Dual N Chnl PowerTrench MOSFET
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USD 4.0188

Multiples of: 1

66 A , 66 A80 v , 80 V3.3 mOhms , 3.3 mOhmsn - channel 2 v , 2 V- 55 C+ 150 C39 Wsmd/smtPOWER56 - 8Reelsi2 channel+/- 20 v , +/- 20 V73 nC , 73 nCenhancement powertrench
NTHL110N65S3F


MOSFET SUPERFET3 650V
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USD 5.2645

Multiples of: 1

30 A650 V110 mOhmsN - Channel 3 V- 55 C+ 150 C240 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V58 nCEnhancement  
NTPF082N65S3F


MOSFET SUPERFET3 650V TO220F PKG
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USD 5.4488

Multiples of: 1

40 A650 V82 mOhmsN - Channel 3 V- 55 C+ 150 C48 WThrough HoleTO - 220F - 3TubeSi1 Channel30 V70 nCEnhancement  
FDBL0110N60


Fairchild Semiconductor MOSFET
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USD 5.6921

Multiples of: 1

300 A60 V2.2 mOhmsn - channel 2 V- 55 C+ 175 C429 Wsmd/smtMO - 299A - 8Reelsi1 channel20 V170 nCenhancement powertrench
NVBLS0D5N04CTXG


N-Channel 40V 65A (Ta), 300A (Tc) 4.3W (Ta), 198.4W (Tc) Surface Mount 8-HPSOF
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USD 6.9799

Multiples of: 1

300 A40 V570 uOhmsN - Channel 4 V- 55 C+ 175 C198.4 WSMD/SMTTO - LL8 - 8 Si1 Channel- 20 V , + 20 V185 nCEnhancement  
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