About SiC MOSFETs

On Semiconductor SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
NVH4L060N090SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 60 mohm, 900 V, M2, TO247-4L
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USD 14.6714

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Through Hole N - Channel1 Channel900 V46 A84 mOhms- 10 V , + 19 V4.3 V87 nC- 55 C+ 175 C221 WEnhancement EliteSiC
NTBG060N090SC1


SiC MOSFETs SIC MOS 60MOHM 900V
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USD 11.168

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SMD/SMT N - Channel1 Channel900 V44 A84 mOhms- 8 V , + 22 V4.3 V88 nC- 55 C+ 175 C211 WEnhancement EliteSiC
NVBG020N090SC1


SiC MOSFETs 20MOHM 900V
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USD 36.5983

Multiples of: 1

SMD/SMT N - Channel1 Channel900 V112 A28 mOhms- 8 V , + 22 V4.3 V200 nC- 55 C+ 175 C477 WEnhancementAEC - Q101EliteSiC
NVBG020N120SC1


SiC MOSFETs SIC MOS D2PAK-7L 20MOHM 1
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USD 53.9817

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV98 A28 mOhms- 15 V , + 25 V4.3 V220 nC- 55 C+ 175 C468 WEnhancementAEC - Q101EliteSiC
NVHL080N120SC1


SiC MOSFETs SIC MOS 80MW 1200 V 80 mOhms 44A
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USD 18.9992

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV31 A110 mOhms- 15 V , + 25 V4.3 V56 nC- 55 C+ 175 C178 WEnhancementAEC - Q101EliteSiC
NTHL160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, TO-247-3L
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ON Semiconductor Availability : 1
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USD 8.6655

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C119 WEnhancement EliteSiC
NVH4L160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-4L
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USD 11.8031

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV17.3 A224 mOhms- 15 V , + 25 V4.3 V34 nC- 55 C+ 175 C111 WEnhancement EliteSiC
NTBL075N065SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 57 mohm, 650 V, M2, TOLL
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USD 4.0707

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V37 A85 mOhms- 8 V , + 22.6 V4.3 V59 nC- 55 C+ 170 C139 WEnhancement EliteSiC
NTH4L095N065SC1


SiC MOSFETs SIC MOS TO247-4L 650V
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USD 5.0477

Multiples of: 1

Through Hole N - Channel1 Channel650 V31 A105 mOhms- 8 V , + 22 V4.3 V50 nC- 55 C+ 175 C129 WEnhancement  
NTBG160N120SC1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide (SiC) MOSFET - EliteSiC, 160 mohm, 1200 V, M1, D2PAK-7L
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USD 5.8346

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV19.5 A224 mOhms- 15 V , + 25 V4.3 V33.8 nC- 55 C+ 175 C136 WEnhancement EliteSiC
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