About SiC MOSFETs

Stmicroelectronics SiC MOSFETs

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  Vgs - Gate-source Voltage
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  Vgs Th - Gate-source Threshold Voltage
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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT20N120H


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 11.9563

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV20 A239 mOhms- 10 V , + 25 V3.5 V45 nC- 55 C+ 175 C175 WEnhancement  
SCT027W65G3-4AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A
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USD 13.884

Multiples of: 1

Through Hole N - Channel1 Channel650 V60 A29 mOhms- 18 V , + 18 V4.2 V51 nC- 55 C+ 200 C313 WEnhancement  
SCTL35N65G2V


SiC MOSFETs Silicon carbide Power MOSFET 650 V, 55 mOhm typ 40 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 23.5923

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V40 A67 mOhms- 10 V , + 22 V5 V73 nC- 55 C+ 175 C417 WEnhancement  
SCTW70N120G2V


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 21 mOhm typ 91 A
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USD 23.7079

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV91 A21 mOhms- 10 V , + 22 V4.9 V150 nC- 55 C+ 200 C547 WEnhancement  
SCT30N120H


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm
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USD 26.1888

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV45 A90 mOhms- 10 V , + 25 V1.8 V105 nC- 55 C+ 175 C270 WEnhancement  
SCTWA50N120


SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 26.5532

Multiples of: 10

Through Hole N - Channel1 Channel1.2 kV65 A52 mOhms- 10 V , + 25 V1.8 V122 nC- 55 C+ 200 C318 WEnhancement HiP247
SCT30N120


SiC MOSFETs 1200V silicon carbide MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 37.3141

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV45 A80 mOhms- 10 V , + 25 V3.5 V105 nC- 55 C+ 200 C270 WEnhancement HiP247
SCTH100N65G2-7AG


SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 39.4061

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V95 A26 mOhms- 10 V , + 22 V1.9 V162 nC- 55 C+ 175 C360 WEnhancementAEC - Q101 
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