About SiC MOSFETs

SiC MOSFETs

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Enter Qty Mounting StylePackage/CaseTransistor PolarityNumber of ChannelsVds - Drain-Source Breakdown VoltageId - Continuous Drain CurrentRds On - Drain-Source ResistanceVgs - Gate-Source VoltageVgs th - Gate-Source Threshold VoltageQg - Gate ChargeMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationChannel ModeQualificationTradename
  
                    
SCT3080ARHRC15


SiC MOSFETs 650V, 30A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 827
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USD 8.64

Multiples of: 1

Through Hole N - Channel1 Channel650 V30 A80 mOhms- 4 V , + 22 V5.6 V48 nC + 175 C134 WEnhancement  
IMBG65R107M1HXTMA1


SiC MOSFETs Y
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Infineon Availability : 822
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USD 4.02

Multiples of: 1

SMD/SMT N - Channel1 Channel650 V24 A141 mOhms- 5 V , + 23 V5.7 V35 nC- 55 C+ 175 C110 WEnhancement CoolSiC
MSC035SMA070B4


SiC MOSFETs MOSFET SIC 700 V 35 mOhm TO-247-4
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 822
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USD 14.333

Multiples of: 1

Through Hole N - Channel1 Channel700 V77 A44 mOhms- 10 V , + 23 V1.9 V99 nC- 55 C+ 175 C283 WEnhancement  
SCT4036KEC11


SiC MOSFETs TO247 1.2KV 43A N-CH SIC
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ROHM Availability : 817
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USD 20.064

Multiples of: 1

Through Hole N - Channel1 Channel1.2 kV43 A36 mOhms- 4 V , + 21 V4.8 V91 nC + 175 C176 WEnhancement  
SCT3120ALHRC11


SiC MOSFETs 650V 21A 103W SIC 120mOhm TO-247N
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ROHM Availability : 814
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USD 5.9455

Multiples of: 1

Through Hole N - Channel1 Channel650 V21 A120 mOhms- 4 V , + 22 V2.7 V38 nC- 55 C+ 175 C103 WEnhancementAEC - Q101 
NTH4L028N170M1


SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, TO-247-4L
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 812
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USD 30.9916

Multiples of: 1

Through Hole N - Channel1 Channel1.7 kV81 A40 mOhms- 15 V , + 25 V4.3 V200 nC- 55 C+ 175 C535 WEnhancement EliteSiC
SCT3060ARC15


SiC MOSFETs 650V, 39A, 60mO, SIC MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 810
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USD 10.032

Multiples of: 1

Through Hole N - Channel1 Channel650 V39 A60 mOhms- 4 V , + 22 V5.6 V58 nC + 175 C165 WEnhancement  
SCT3105KW7TL


SiC MOSFETs 1200V 23A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 807
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USD 10.1775

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV23 A137 mOhms- 4 V , + 22 V5.6 V51 nC-+ 175 C125 WEnhancement  
C3M0065100J


SiC MOSFETs 1000V 65mOhm G3 SiC MOSFET TO-263-7
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Wolfspeed Availability : 801
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USD 15.8666

Multiples of: 1

SMD/SMT N - Channel1 Channel1 kV35 A65 mOhms- 4 V , + 15 V1.8 V35 nC- 55 C+ 150 C113.5 WEnhancement  
IMBG120R022M2HXTMA1


SiC MOSFETs Y
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 792
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USD 15.156

Multiples of: 1

SMD/SMT N - Channel1 Channel1.2 kV87 A21.6 mOhms- 7 V , + 20 V5.1 V71 nC- 55 C+ 175 C385 WEnhancement  
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