AS1C8M16PL-70BIN Revision History 128M (4Mx16 bit CellularRAM AD-MUX *2 stack) Low Power PSEUDO SRAM 49ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Aug 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 53 - Rev.1.0 Aug. 2018AS1C8M16PL-70BIN 4Mx16 bit CellularRAM AD-MUX *2 stack x16 Burst, Multiplexed Address/Data RAM Specification FEATURES - 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108 MHz (tCLK = 9.26ns) , 133MHz(tCLK = 7.5ns) Burst initial latency: 37.0ns (4 clocks) 108 MHz , 37.5ns (5 clocks) 133 MHz tACLK: 7ns 108 MHz , 5.5ns 133 MHz - Low power consumption: Asynchronous READ: <25mA Initial access, burst READ: (37.0ns 4 clocks 108 MHz) <35mA Continuous burst READ: <30mA Initial access, burst READ: (37.5ns 5 clocks 133 MHz) <40mA Continuous burst READ: <35mA Deep power down: <40 uA(max. at 85C) : < 10uA(Typ.at 25C) - Low-power features On-chip temperature compensated self refresh (TCSR) Partial array refresh (PAR) Deep Power down(DPD) mode OPTIONS - Configuration: 64Mb (4 megabit x 16) * 2 stack - Vcc core / VccQ I/O voltage supply: 1.8V - Timing: 70ns access - Frequency: 48MHz,83 MHz, 108 MHz, 133 MHz - Standby current at 85C : 180uA (Max) - Standby current at 25C : 100uA (Typ) - Package type: 49ball FBGA Package(4.0x4.0x0.8mm) - Operating temperature range: Industrial : -30C to +85C ORDERING INFORMATION Power Dissipation Product Operating Vcc PKG Interface Bus Standby Family Temperature Range Type o (I , Typ.,25 C) SB1 o 2) AS1C8M16PL-70BIN x16 1.70 ~ 1.95V 49-FBGA (-30 ~ 85 C) 100 A Confidential - 2 of 53 - Rev.1.0 Aug. 2018