January 2007FEBRUARY 2009 AS6C1616 512K X 8 BI T LOW POWER CMOS SRAM 1024K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C1616 is a 16,777,216-bit low power Fast access time : 55/70ns CMOS static random access memory organized as Low power consumption: 1,048,576 words by 16 bits. It is fabricated using Operating current : 45/30mA (TYP.) very high performance, high reliability CMOS Standby current : 4A (TYP.) SL-version technology. Its standby current is stable within the Single 2.7V ~ 3.6V power supply range of operating temperature. All inputs and outputs TTL compatible Fully static operation The AS6C1616 is well designed for low power Tri-state output application, and particularly well suited for battery Data byte control : LB (DQ0 ~ DQ7) back-up nonvolatile memory application. UB (DQ8 ~ DQ15) Data retention voltage : 1.2V (MIN.) The AS6C1616 operates from a singlepower Lead free and green package available supply of 2.7V ~ 3.6V and all inputs and outputs are Package : 48-ball 6mm x 8mm TFBGA fully TTL compatible PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating (Icc,TYP.) o AS6C1616(I) -40 ~ 85 C 2.7 ~ 3.6V 55/70ns 4A 45/30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A19 Address Inputs Vcc Vss DQ0 DQ15 Data Inputs/Outputs CE , CE2 Chip Enable Input 1024Kx16 A0-A19 DECODER MEMORY ARRAY WE Write Enable Input Output Enable Input OE LB Lower Byte Control UB Upper Byte Control V Power Supply CC V Ground SS DQ0-DQ7 Lower Byte I/O DATA COLUMN I/O CIRCUIT DQ8-DQ15 Upper Byte CE CE2 WE CONTROL CIRCUIT OE LB UB FEBRUARY/2009, V 1.a Alliance Memory Inc. Page 1 of 11 FEBRUARY 2009January 2007 AS6C1616 512K X 8 BIT LOW POWER CMOS SRAM 1024K X 16 BIT LOW POWER CMOS SRAM PIN CONFIGURATION A LB OE A0 A1 A2 CE2 B DQ8 UB A3 A4 CE DQ0 DQ9 DQ10 A5 A6 DQ1 DQ2 C D Vss DQ11 A17 A7 DQ3 Vcc E Vcc DQ12 NC A16 DQ4 Vss F DQ14 DQ13 A14 A15 DQ5 DQ6 G DQ15 A19 A12 A13 WE DQ7 A18 A8 A9 A10 A11 NC H 123 4 5 6 TFBGA ABSOLUTE MAXIMUN RATINGS* PARAMETER SYMBOL RATING UNIT Voltage on VCC relative to V SS VT1 -0.5 to 4.6 V Voltage on any other pin relative to V SS VT2 -0.5 to VCC+0.5 V -40 to 85(I grade) Operating Temperature TA Storage Temperature TSTG -65 to 150 Power Dissipation PD 1 W DC Output Current IOUT 50 mA Soldering Temperature (under 10 sec) TSOLDER 260 *Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. FEBRUARY/2009, V 1.a Alliance Memory Inc. Page 2 of 11