X-On Electronics has gained recognition as a prominent supplier of AS6C2008-55STIN SRAM across the USA, India, Europe, Australia, and various other global locations. AS6C2008-55STIN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

AS6C2008-55STIN Alliance Memory

AS6C2008-55STIN electronic component of Alliance Memory
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Part No.AS6C2008-55STIN
Manufacturer: Alliance Memory
Category: SRAM
Description: Alliance Memory SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
Datasheet: AS6C2008-55STIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.081 ea
Line Total: USD 4.08 
Availability - 64
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
64
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 4.081
10 : USD 3.663
100 : USD 3.344
234 : USD 3.135
468 : USD 3.058
1170 : USD 3.047
2574 : USD 2.992
5148 : USD 2.926
10062 : USD 2.882

   
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RoHS - XON
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Supply Voltage - Min
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We are delighted to provide the AS6C2008-55STIN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS6C2008-55STIN and other electronic components in the SRAM category and beyond.

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February 2007 AS6C2008 Rev. 1.1 256K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C2008 is a 2,097,152-bit low power CMOS Access time : 55ns static random access memory organized as 262,144 Low power consumption: words by 8 bits. It is fabricated using very high Operating current :20mA (TYP.) performance, high reliability CMOS technology. Its Standby current : 20mA(TYP.)L Version standby current is stable within the range of 1A (TYP.) LL-version operating temperature. Single 2.7V ~ 3.6V power supply The AS6C2008 is well designed for very low power Fully static operation system applications, and particularly well suited for Tri-state output battery back-up nonvolatile memory application. Data retention voltage : 1.5V (MIN.) All Products ROHS Compliant The AS6C2008 operates from a single power Package : 32-pin 450 mil SOP supply of 2.7V ~ 3.6V 32-pin 8mm x 20mm TSOP-I . 32-pin 8mm x 13.4mm sTSOP 36-ball 6mm x 8mm TFBGA PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) -40 ~ 85C 2 AS6C2008 (I) .7 ~ 3.6V 55ns 20A(L)/1A(LL) 20mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A17 Address Inputs Vcc Vss DQ0 DQ7 Data Inputs/Outputs CE , CE2 Chip Enable Inputs 256Kx8 A0-A17 DECODER MEMORY ARRAY WE Write Enable Input OE Output Enable Input VCC Power Supply VSS Ground NC No Connection I/O DATA DQ0-DQ7 COLUMN I/O CIRCUIT CE CE2 CONTROL WE CIRCUIT OE 10/February/07, v.1.0 Alliance Memory Inc. Page 1 of 13AS6C2008 February 2007 AS6C2008 Rev. 1.1 256KX8BITLOWPOWERCMOSSRAM PINCONFIGURATION A17 1 32 Vcc A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE A7 5 28 A13 A11 1 32 OE A9 2 31 A10 A6 6 27 A8 A8 3 30 CE A13 4 29 DQ7 A5 7 26 A9 WE 5 28 DQ6 CE2 6 27 DQ5 A4 8 25 A11 A15 7 26 DQ4 Vcc 8 25 DQ3 A3 9 24 OE A17 9 AS6C2008 24 Vss A2 10 23 A10 A16 10 23 DQ2 A14 11 22 DQ1 A1 11 22 CE A12 12 21 DQ0 A7 13 20 A0 A0 12 21 DQ7 A6 14 19 A1 A5 15 18 A2 DQ0 13 20 DQ6 A4 16 17 A3 DQ1 14 19 DQ5 TSOP-I/sTSOP DQ2 15 18 DQ4 Vss 16 17 DQ3 SOP A A0 A1 CE2 A3 A6 A8 B DQ4 A2 WE A4 A7 DQ0 DQ5 NC A5 DQ1 C D Vss Vcc E Vcc Vss F DQ6 NC A17 DQ2 G DQ7 OE CE A16 A15 DQ3 A9 A10 A11 A12 A13 A14 H 1 2 3 4 5 6 TFBGA 10/February/07, v.1.0 Alliance Memory Inc. Page 2 of 13

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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