January 2007FEBRUARY 2008 AS6C2016 512K X 8 BIT LOW POWER CMOS SRAM 128K X 16 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C2016 is a 2,097,152-bit low power Fast access time : 55ns CMOS static random access memory organized as Low power consumption: 131,072 words by 16 bits. It is fabricated using very Operating current : 20/18mA (TYP.) high performance, high reliability CMOS technology. Standby current : 2A (TYP.) Its standby current is stable within the range of Single 2.7V ~ 5.5V power supply operating temperature. All inputs and outputs TTL compatible Fully static operation The AS6C2016 is well designed for low power Tri-state output application, and particularly well suited for battery Data byte control : LB (DQ0 ~ DQ7) back-up nonvolatile memory application. UB (DQ8 ~ DQ15) Data retention voltage : 2.0V (MIN.) The AS6C2016 operates from a single power Lead free and green package available supply of 2.7V ~ 5.5V and all inputs and outputs are Package : 44-pin 400 mil TSOP-II fully TTL compatible 48-ball 6mm x 8mm TFBGA PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C2016 (I) -40 ~ 85 2.7 ~ 5.5V 55ns 2A 20/18mA FEBRUARY/2008, V 1.c Alliance Memory Inc. Page 1 of 13 FEBRUARY 2008January 2007 AS6C2016 512K X 8 BIT LOW POWER CMOS SRAM 128K X 16 BIT LOW POWER CMOS SRAM FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Vcc A0 - A16 Address Inputs Vss DQ0 DQ15 Data Inputs/Outputs CE Chip Enable Input 128Kx16 A0-A16 DECODER MEMORY ARRAY WE Write Enable Input OE Output Enable Input LB Lower Byte Control UB Upper Byte Control VCC Power Supply VSS Ground DQ0-DQ7 Lower Byte I/O DATA COLUMN I/O CIRCUIT DQ8-DQ15 Upper Byte CE WE CONTROL OE CIRCUIT LB UB FEBRUARY/2008, V 1.c Alliance Memory Inc. Page 2 of 13