MARCH2009 AS6C6264A 8KX8BITLOWPOWERCMOSSRAM FEATURES DESCRIPTION data input and control signals W or 8192 x 8 bit static CMOS RAM The AS6C6264A is a static RAM G, the operating current (at IO = 0 70 ns Access Times manufactured using a CMOS mA) drops to the value of the process technology with the Common data inputs and operating current in the Standby following operating modes: outputs mode. The Read cycle is finished by - Read - Standby Three-state outputs the falling edge of E2 or W, or by - Write - Data Retention Typ. operating supply current the rising edge of E1, respectively. The memory array is based on a 6- o 70 ns: 10 mA transistor cell. Standby current: Data retention is guaranteed down o < 2 A at Ta 70 C to 2 V. With the exception of E2, all The circuit is activated by the rising Data retention current at 2 V: inputs consist of NOR gates, so that edge of E2 (at E1 = L), or the falling o < 1 A at Ta 70 C no pull-up/pull-down resistors are edge of E1 (at E2 = H). The address required. This gate circuit allows to TTL/CMOS-compatible and control inputs open achieve low power standby Automatic reduction of power simultaneously. According to the requirements by activation with TTL- dissipation in long Read or Write information of W and G, the data levels too. cycles inputs, or outputs, are active. In a Power supply voltage 5 V Read cycle, the data outputs are If the circuit is inactivated by E2 = L, Operating temperature ranges: activated by the falling edge of G, the standby current o 0 to 70 C afterwards the data word read will o -40 to 85 C be available at the outputs DQ0 - DQ7. After the address change, the ESD protection > 2000 V data outputs go High-Z until the new (MIL STD 883C M3015.7) read information is available. The Latch-up immunity > 100 mA data outputs have no preferred Packages: PDIP28 (600 mil) state. If the memory is driven by SOP28 (330 mil) CMOS levels in the active state, and if there is no change of the address, PINCONFIGURATION PINDESCRIPTION MARCH/2009 ALLIANCEMEMORY PAGE1of10MARCH2009 AS6C6264A 8KX8BITLOWPOWERCMOSSRAM BLOCKDIAGRAM TRUTHTABLE MARCH/2009 ALLIANCEMEMORY PAGE2of10