AS6C6416-55TIN 64M Bits(4Mx16) LOW POWER CMOS SRAM REVISION HISTORY AS6C6416-55TIN 48pin TSOP I Revision Description Issue Date Rev. 1.0 Initial Issue July.2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 12 - Rev.1.0 July 2017AS6C6416-55TIN 64M Bits(4Mx16) LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION n Fast access time : 55ns The AS6C6416 is a 67,108,864-bit low power CMOS n Low power consumption: static random access memory organized as Operating current : 12mA (TYP.) 4,194,304 words by 16 bits or 8,388,608 words by 8 bits. It is fabricated using very high performance, high Standby current : 12A(TYP.) reliability CMOS technology. Its standby current is n Single 2.7V ~ 3.6V power supply stable within the range of operating temperature. n All inputs and outputs TTL compatible n Fully static operation n Tri-state output The AS6C6416 is well designed for low power application, and particularly well suited for battery n Data byte control : ) BYTE fixed to V back-up nonvolatile memory application. (i CC LB controlled DQ0 ~ DQ7 The AS6C6416 operates from a single power UB controlled DQ8 ~ DQ15 supply of 2.7V ~ 3.6V and all inputs and outputs are (ii) BYTE fixed to V SS fully TTL compatible DQ15 used as address pin, while DQ8~DQ14 pins not used n Data retention voltage : 1.2V (MIN.) n ROHS Compliant-Pb free n Package : 48-pin 12mm x 20mm TSOP I PRODUCT FAMILY Power Dissipation Product Operating V Range Speed CC Family Temperature Standby(I ,TYP.) Operating(I ,TYP.) SB1 CC AS6C6416-55TIN 2.7 ~ 3.6V 55ns 12A 12mA -40 ~ 85 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION Vcc SYMBOL DESCRIPTION Vss A0 - A21 Address Inputs(word mode) A-1 - A21 Address Inputs(byte mode) A0~A21 4096Kx16/8192Kx8 DECODER /A-1~A21 MEMORY ARRAY DQ0 - DQ15 Data Inputs/Outputs CE , CE2 Chip Enable Input WE Write Enable Input OE Output Enable Input LB Lower Byte Control DQ0-DQ7 UB Upper Byte Control Lower Byte I/O DATA COLUMN I/O BYTE Byte Enable CIRCUIT DQ8-DQ15 V Power Supply Upper Byte CC V Ground SS CE CE2 WE CONTROL OE CIRCUIT LB UB BYTE Confidential - 2 of 12 - Rev.1.0 July 2017