AS6C8016-55BINTR Alliance Memory

NOVEMBER 2007January 2007 AS6C8016 512KX 8 BIT LOW POWER CMOS SRAM 512K X 16 BIT SUPER LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION The AS6C8016 is a 8,388,608-bit low power Fast access time : 55ns CMOS static random access memory organized as Low power consumption: 524,288 words by 16 bits. It is fabricated using very Operating current : 30mA (TYP.) high performance, high reliability CMOS technology. Standby current : 6A (TYP.) LL-version Its standby current is stable within the range of Single 2.7V ~ 5.5V power supply operating temperature. All inputs and outputs TTL compatible Fully static operation The AS6C8016 is well designed for low power Tri-state output application, and particularly well suited for battery Data byte control : LB (DQ0 ~ DQ7) back-up nonvolatile memory application. UB (DQ8 ~ DQ15) Data retention voltage : 1.5V (MIN.) The AS6C8016 operates from a single power Lead free and green package available supply of 2.7V ~ 5.5V and all inputs and outputs are Package : 44-pin 400 mil TSOP-II fully TTL compatible 48-ball 6mm x 8mm TFBGA PRODUCT FAMILY Product Operating Power Dissipation Vcc Range Speed Family Temperature Standby(ISB1,TYP.) Operating(Icc,TYP.) AS6C8016(I) -40 ~ 85 2.7 ~ 5.5V 55ns 6A(LL) 30mA FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION A0 - A18 Address Inputs Vcc Vss DQ0 DQ15 Data Inputs/Outputs CE Chip Enable Input 512Kx16 A0-A18 DECODER MEMORY ARRAY WE Write Enable Input OE Output Enable Input LB Lower Byte Control UB Upper Byte Control V Power Supply CC V Ground SS DQ0-DQ7 Lower Byte I/O DATA COLUMN I/O CIRCUIT DQ8-DQ15 Upper Byte CE WE CONTROL OE CIRCUIT LB UB NOVEMBER/2007, V 1.0 Alliance Memory Inc. Page 1 of 12 AS6C8016 NOVEMBER 2007January 2007 AS6C8016 512K X 8 BIT LOW POWER CMOS SRAM 512K X 16 BIT SUPER LOW POWER CMOS SRAM PIN CONFIGURATION A4 1 4 4 A5 A3 2 4 3 A6 A2 3 4 2 A7 4 1 A1 4 OE A0 5 4 0 UB CE 6 3 9 LB DQ0 7 3 8 DQ15 DQ1 8 3 7 DQ14 DQ2 9 3 6 DQ13 DQ3 1 0 3 5 DQ12 3 4 Vcc 1 1 Vss Vss 1 2 3 3 Vcc LB OE A0 A1 A2 NC A DQ4 1 3 3 2 DQ11 DQ8 UB A3 A4 CE DQ0 B DQ5 1 4 3 1 DQ10 C DQ9 DQ10 A5 A6 DQ1 DQ2 DQ6 1 5 3 0 DQ9 DQ7 1 6 2 9 DQ8 D Vss DQ11 A17 A7 DQ3 Vcc WE 1 7 2 8 A8 E Vcc DQ12 NC A16 DQ4 Vss A18 1 8 2 7 A9 DQ14 DQ13 A14 A15 DQ5 DQ6 F A17 1 9 2 6 A10 DQ15 NC A12 A13 WE DQ7 G A16 2 0 2 5 A11 A15 2 1 2 4 A12 H A18 A8 A9 A10 A11 NC A14 2 2 2 3 A13 1 2 3 4 5 6 TSOP II TFBGA ABSOLUTE MAXIMUN RATINGS* PARAMETER SYMBOL RATING UNIT Voltage on VCC relative to V SS VT1 -0.5 to 6.5 V Voltage on any other pin relative to V SS VT2 -0.5 to VCC+0.5 V Operating Temperature TA -40 to 85(I grade) Storage Temperature TSTG -65 to 150 Power Dissipation PD 1 W DC Output Current IOUT 50 mA Soldering Temperature (under 10 sec) TSOLDER 260 *Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. NOVEMBER/2007, V 1.0 Alliance Memory Inc. Page 2 of 12