AS6C8016A-55BINTR Alliance Memory

AS6C8016A Low Power, 512Kx16 SRAM Revision History 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision No History Date Remark 1.0 Initial Issue August 2010 Preliminary 2.0 tDW updated to 25ns October 2012 3.0 Update USA HQ moved - change of address September 2014 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 1 Rev. 3.0 Sep /2014 AS6C8016A Low Power, 512Kx16 SRAM FEATURES GENERAL DESCRIPTION Process Technology : 0.15 m Full CMOS The AS6C8016A families are fabricated by advanced Organization : 512K x 16 bit full CMOS process technology. The families support Power Supply Voltage : 2.7V ~ 3.6V industrial temperature range and Chip Scale Package Low Data Retention Voltage : 1.5V(Min.) for user flexibility of system design. The families also Three state output and TTL Compatible support low data retention voltage for battery back- up Package Type : 48-FPBGA operation with low data retention current. dual CS A6 is CS2 All parts are ROHS Compliant PRODUCT FAMILY Power Dissipation Product Operating Vcc PKG Speed Standby Operating Family Temperature Range Type (I , Typ.) (I .Max.) SB1 CC1 Industrial 1) AS6C8016A-55BIN 2.7 ~ 3.6 V 55 ns 4 mA 48-FPBGA 2 A o (-40 ~ 85 C) FUNCTIONAL BLOCK DIAGRAM Pre-charge Circuit A0 V CC A1 V SS A2 A3 Memory Array A4 A5 2048 x 4096 A6 A7 A8 A9 A10 Data DQ0 ~ DQ7 Cont I/O Circuit Data DQ8 ~ DQ15 Cont Column Select A11 A12 A13 A14 A15 A16 A17 A18 WE OE UB Control Logic LB CS1 CS2 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 2 Rev. 3.0 Sep /2014 Row Select