AS6C8016B-55ZIN Alliance Memory

AS6C8016B-55ZIN electronic component of Alliance Memory
AS6C8016B-55ZIN Alliance Memory
AS6C8016B-55ZIN SRAM
AS6C8016B-55ZIN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AS6C8016B-55ZIN SRAM across the USA, India, Europe, Australia, and various other global locations. AS6C8016B-55ZIN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

Part No. AS6C8016B-55ZIN
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM
Datasheet: AS6C8016B-55ZIN Datasheet (PDF)
Price (USD)
1: USD 8.4 ea
Line Total: USD 8.4 
Availability : 0
  
QtyUnit Price
1$ 8.4
3$ 6.412
7$ 6.062

Availability 0
Ship by Fri. 19 Sep to Tue. 23 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 8.4
3$ 6.412
7$ 6.062

   
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS6C8016B-55ZIN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS6C8016B-55ZIN and other electronic components in the SRAM category and beyond.

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The Alliance Memory AS6C8016B-55ZIN is part of the AS6C8000B family of low-power, low-voltage static RAM (SRAM) components. This particular part is a 16Mbit asynchronous SRAM device with a 5.5V power supply. It uses a dual-bank architecture and features a maximum cycle time of 55ns, a maximum random access time of 45ns, and a current consumption of 10mW during read operations. The AS6C8016B-55ZIN is ideal for applications requiring a high-endurance, low-power, and low-cost memory solution with fast access. It is available in a variety of packages, including 48-pin TSOP, 48-ball UFBGA, and 48-pin CSP.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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