X-On Electronics has gained recognition as a prominent supplier of AS7C34098A-10TCN SRAM across the USA, India, Europe, Australia, and various other global locations. AS7C34098A-10TCN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

AS7C34098A-10TCN Alliance Memory

AS7C34098A-10TCN electronic component of Alliance Memory
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Part No.AS7C34098A-10TCN
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM 4M, 3.3V, 10ns, FAST 256K x 16 Asyn SRAM
Datasheet: AS7C34098A-10TCN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.719 ea
Line Total: USD 4.72 
Availability - 395
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
130
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 135
Multiples : 135
135 : USD 4.316

395
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 4.719
10 : USD 4.081
100 : USD 4.004
270 : USD 3.916
5130 : USD 3.905
10125 : USD 3.861

87
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 10.556
3 : USD 8.134
6 : USD 7.686
135 : USD 7.378

   
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RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS7C34098A-10TCN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS7C34098A-10TCN and other electronic components in the SRAM category and beyond.

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AS7C34098A August 2004 3.3 V 256 K 16 CMOS SRAM Features Pin compatible with AS7C34098 Easy memory expansion with CE, OE inputs Industrial and commercial temperature TTL- and CMOS-compatible, three-state I/O Organization: 262,144 words 16 bits JEDEC standard packages Center power and ground pins - 44-pin SOJ -400-mil High speed - 44-pin TSOP 2 - 48-pin Mini BGA - 10/12/15/20 ns address access time ESD protection 2000 volts - 4/5/6/7 ns output enable access time Low power consumption: ACTIVE Latch-up current 200 mA - 650 mW /max 10 ns Low power consumption: STANDBY - 28.8 mW /max CMOS Individual byte read/write controls Logic block diagram Pin arrangement for SOJ Bottom View 48BGA and TSOP 2 Selection guide 10 12 15 20 Unit Maximum address access time 10 12 15 20 ns Maximum output enable access time 4 5 6 7 ns Industrial 180 160 140 110 mA Maximum operating current Commercial 170 150 130 100 mA Maximum CMOS standby current 8 8 8 8 mA 11/14/11, v. 2.2 Alliance Memory Inc. P. 1 of 11 Copyright Alliance Memory Inc. All rights reserved. AS7C34098A Functional description The AS7C34098A is a high-performance CMOS 4,194,304-bit Static Random Access Memory (SRAM) device organized as 262,144 words 16 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. Equal address access and cycle times (t , t , t ) of 10/12/15/20 ns with output enable access times (t ) of 4/5/6/7 ns are AA RC WC OE ideal for high-performance applications. The chip enable input CE permits easy memory expansion with multiple-bank memory systems. When CE is high the device enters standby mode. The device is guaranteed not to exceed 28.8mW power consumption in CMOS standby mode. A write cycle is accomplished by asserting write enable (WE) and chip enable (CE). Data on the input pins I/O1 I/O16 is written on the rising edge of WE (write cycle 1) or CE (write cycle 2). To avoid bus contention, external devices should drive I/O pins only after outputs have been disabled with output enable (OE) or write enable (WE). A read cycle is accomplished by asserting output enable (OE) and chip enable (CE), with write enable (WE) high. The chip drives I/O pins with the data word referenced by the input address. When either chip enable or output enable is inactive, or write enable is active, output drivers stay in high-impedance mode. The device provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. LB controls the lower bits, I/O1 I/O8, and UB controls the higher bits, I/O9 I/O16. All chip inputs and outputs are TTL- and CMOS-compatible, and operation is for 3.3V (AS7C34098A) supply. The device is available in the JEDEC standard 400-mil, 44-pin SOJ, TSOP 2. Absolute maximum ratings Parameter Symbol Min Max Unit Voltage on V relative to GND 0.50 +5.0 V V CC t1 Voltage on any pin relative to GND 0.50 V +0.50 V V CC t2 Power dissipation P 1.5 W D Storage temperature (plastic) 65 +150 C T stg Ambient temperature with V applied 55 +125 C T CC bias DC current into outputs (low) 20 mA I OUT Note: Stresses greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth table CE WE OE LB UB I/O1I/O8 I/O9 I/O16 Mode H X X X X High Z High Z Standby (I , I ) SB SB1 L H H X X High Z High Z Output disable (I ) CC L X X H H L H D High Z OUT L H L H L High Z D Read (I ) OUT CC L L D D OUT OUT L H D High Z IN L L X H L High Z D IN L L D D Write (I ) IN IN CC Key: X = Dont care, L = Low, H = High. 11/14/11,v. 2.2 Alliance Memory Inc P. 2 of 11

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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