X-On Electronics has gained recognition as a prominent supplier of AS7C351232-10BIN SRAM across the USA, India, Europe, Australia, and various other global locations. AS7C351232-10BIN SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

AS7C351232-10BIN Alliance Memory

AS7C351232-10BIN electronic component of Alliance Memory
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Part No.AS7C351232-10BIN
Manufacturer: Alliance Memory
Category: SRAM
Description: SRAM 16M, 3.3V, 10ns FAST 512K X 32 Asyn SRAM
Datasheet: AS7C351232-10BIN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 28.035
10 : USD 26.1198
25 : USD 24.8486
50 : USD 24.6427
100 : USD 21.6744
240 : USD 21.2625
480 : USD 21.1656
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Memory Size
Organization
Access Time
Interface Type
Supply Voltage - Max
Supply Voltage - Min
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Package / Case
Packaging
Supply Current - Max
Memory Type
Series
Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS7C351232-10BIN from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS7C351232-10BIN and other electronic components in the SRAM category and beyond.

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AS7C351232-10BIN 512K X 32 BIT HIGH SPEED CMOS SRAM Revision History AS7C351232-10BIN 90ball TFBGA PACKAGE Revision Details Date Rev 1.0 Initial Issue Jan. 2017 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/12 - Rev.1.0 Jan. 2017AS7C351232-10BIN 512K X 32 BIT HIGH SPEED CMOS SRAM FEATURES GENERAL DESCRIPTION Fast access time : 10ns The AS7C351232-10BIN is a 16M-bit high speed Low power consumption: CMOS static random access memory organized Operating current : 125mA (TYP.) as 512K words by 32 bits. It is fabricated using Standby current : 4mA (TYP.) very high performance, high reliability CMOS Single 3.3V power supply technology. Its standby current is stable within the All inputs and outputs TTL compatible range of operating temperature. Fully static operation Tri-state output The AS7C351232-10BIN operates from a single Data byte control : B0 (DQ0 ~ DQ7) power supply of 3.3V and all inputs and outputs B1 (DQ8 ~ DQ15) are fully TTL compatible B2 (DQ16~DQ23) B3 (DQ24~DQ31) Data retention voltage : 1.5V (MIN.) ROHS Compliant/Pb & Halogen free Package : 90-ball 8mm x 13mm TFBGA PRODUCT FAMILY Power Dissipation Product Operating V Range Speed CC Family Temperature Standby(ISB1,TYP.) Operating(ICC,TYP.) AS7C351232-10BIN -40 ~ 85 2.7 ~ 3.6V 10ns 4mA 125mA ORDERING INFORMATION Access Time Temperature Packing Package Type Alliance Part Number Type (Speed/ns) Range( ) 90-ball AS7C351232-10BIN Tray (8mm x 13mm) 10 -40~85 AS7C351232-10BINTR TFBGA Tape Reel FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION SYMBOL DESCRIPTION Vcc A0 - A18 Address Inputs Vss DQ0 - DQ31 Data Inputs/Outputs 512Kx32 A0-A18 DECODER CE , CE2 Chip Enable Input MEMORY ARRAY WE Write Enable Input OE Output Enable Input B0 - B3 Byte Control VCC Power Supply DQ0-DQ7 VSS Ground DQ8-DQ15 I/O DATA COLUMN I/O CIRCUIT DQ16-DQ23 NC No Connection DQ24-DQ31 CE CE2 CONTROL WE CIRCUIT OE B0 -B3 Confidential - 2/12 - Rev.1.0 Jan. 2017

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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