AS7C3513B-15JCNTR Alliance Memory

AS7C3513B-15JCNTR electronic component of Alliance Memory
AS7C3513B-15JCNTR Alliance Memory
AS7C3513B-15JCNTR SRAM
AS7C3513B-15JCNTR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AS7C3513B-15JCNTR SRAM across the USA, India, Europe, Australia, and various other global locations. AS7C3513B-15JCNTR SRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for SRAM, ensuring timely deliveries around the world.

Part No.AS7C3513B-15JCNTR
Manufacturer:Alliance Memory
Category:SRAM
Description:SRAM 512K 3.3V 15ns FAST 32K x 16 Asynch SRAM
Datasheet:AS7C3513B-15JCNTR Datasheet (PDF)
Shipping Charges:Click here for details
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Price (USD)
  
500: USD 1.904 ea
Line Total: USD 952 
Availability : 0
  
QtyUnit Price
500$ 1.904
  

Availability0
Ship by Fri. 19 Jun to Tue. 23 Jun
MOQ : 500
Multiples : 500
QtyUnit Price
500$ 1.904

   
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RoHS - XON
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We are delighted to provide the AS7C3513B-15JCNTR from our SRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS7C3513B-15JCNTR and other electronic components in the SRAM category and beyond.

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The AS7C3513B-15JCNTR is a 512K x 16 asynchronous static RAM (SRAM) designed by Alliance Memory. This SRAM is available in a standard 16-pin SOIC package and has an active power consumption of just 80 mW. It supports 1.2V to 3.6V data retention operation and allows for random-access speeds of up to 20 MHz when operated at 3.3V. The device is built with advanced CMOS process technology to provide very low supply current and fast common access times of 15, 18, 20 or 25 nanoseconds (ns). Other features include fast page access times of 5, 6, 7.5 or 10 ns, configuration data protection, power-down protection, and write protection. This SRAM is suitable for high-speed buffer memory, FIFO, RAM data storage, and software-controlled memory uses.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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