AO3404A N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO3404A uses advanced trench technology to V (V) = 30V DS provide excellent R and low gate charge. This I = 5.8A (V = 10V) DS(ON) D GS device is suitable for use as a load switch or in PWM R < 25m (V = 10V) DS(ON) GS applications. R < 35m (V = 4.5V) DS(ON) GS SOT23 Top View Bottom View D D D G G S S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS T =25C Continuous Drain 5.8 A A,F Current T =70C I 4.9 A A D B Pulsed Drain Current I 64 DM T =25C 1.4 A P W D Power Dissipation T =70C 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 65 90 C/W R JA A Maximum Junction-to-Ambient Steady-State 85 125 C/W C Steady-State R 63 80 C/W Maximum Junction-to-Lead JL Rev.5.0: June 2015 www.aosmd.com Page 1 of 4Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V DSS D GS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.5 2.1 2.6 V GS(th) DS GS D I On state drain current V =4.5V, V =5V 64 A D(ON) GS DS V =10V, I =5.8A 18.4 25 GS D m R Static Drain-Source On-Resistance T =125C 26.2 36 DS(ON) J V =4.5V, I =4.8A 24.5 35 m GS D g Forward Transconductance V =5V, I =5.8A 22 S FS DS D V Diode Forward Voltage I =1A, V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 373 448 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 67 pF GS DS oss C Reverse Transfer Capacitance 41 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.9 1.8 2.8 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 7.1 11 nC g Q (4.5V) Total Gate Charge 3.3 nC g VGS=10V, VDS=15V, ID=5.8A Q Gate Source Charge 1.4 nC gs Q Gate Drain Charge 1.7 nC gd t Turn-On DelayTime 4.5 6.5 ns D(on) t Turn-On Rise Time 2.4 ns V =10V, V =15V, R =2.6, r GS DS L R =3 t Turn-Off DelayTime 14.8 ns GEN D(off) t Turn-Off Fall Time 2.5 ns f t I =5.8A, di/dt=100A/s 10.5 12.6 rr Body Diode Reverse Recovery Time F ns Q I =5.8A, di/dt=100A/s 4.5 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. F.The current rating is based on the t 10s thermal resistance rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.5.0: June 2015 www.aosmd.com Page 2 of 4