AO3414 20V N-Channel MOSFET GGeenneerraall DDeessccrriippttiioonn FFeeaattuurreess TThhee AAOO33441144 uuseses s aaddvvaanncecedd ttrreennchch tteechchnnoollooggyy ttoo VV == 2200VV DDSS pprroovviiddee eexxcecelllleenntt RR ,, llooww ggaattee chchaarrggee aanndd II == 33AA ((VV == 44..55VV)) DDSS((OONN)) DD GGSS ooppeerraattiioonn wwiitthh ggaattee vvoollttaaggees s aas s llooww aas s 11..88VV.. TThhiis s RR << 6622mm ((VV == 44..55VV)) DDSS((OONN)) GGSS ddeevviicece iis s susuiittaabbllee ffoorr uusese aas s aa llooaadd swswiittchch oorr iinn PPWWMM RR << 7700mm ((VV == 22..55VV)) DDSS((OONN)) GGSS aapppplliicacattiioonns.s. RR << 8855mm ((VV == 11..88VV)) DDSS((OONN)) GGSS SSOOTT2233 DD TToopp VViieeww BBoottttoomm VViieeww DD DD GG GG SS SS SS GG Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8 V GS T =25C 3 Continuous Drain A A T =70C I Current 2.5 A A D B Pulsed Drain Current I 16 DM T =25C 1.4 A P W D A Power Dissipation T =70C 0.9 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 70 90 C/W R JA A Maximum Junction-to-Ambient Steady-State 100 125 C/W C Steady-State R 63 80 C/W Maximum Junction-to-Lead JL Rev 7: July 2010 www.aosmd.com Page 1 of 5AO3414 Electrical Characteristics (T =25C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 20 V D GS DSS V =20V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V =8V 100 nA DS GS GSS V =V I =250A V Gate Threshold Voltage 0.4 0.7 1 V DS GS D GS(th) V =4.5V, V =5V I On state drain current 16 A GS DS D(ON) V =4.5V, I =3A 51 62 GS D m T =125C 68 85 J R Static Drain-Source On-Resistance DS(ON) V =2.5V, I =2.8A 58 70 m GS D V =1.8V, I =2.5A 68 85 m GS D V =5V, I =3A g Forward Transconductance 11 S DS D FS I =1A,V =0V V Diode Forward Voltage 0.7 1 V SD S GS I Maximum Body-Diode Continuous Current 2 A S DYNAMIC PARAMETERS C Input Capacitance 260 320 pF iss V =0V, V =10V, f=1MHz C Output Capacitance 48 pF GS DS oss C Reverse Transfer Capacitance 27 pF rss R Gate resistance V =0V, V =0V, f=1MHz 3 4.5 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 2.9 3.8 nC g V =4.5V, V =10V, I =3A Q Gate Source Charge 0.4 nC GS DS D gs Q Gate Drain Charge 0.6 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 22..55 nnss DD((oonn)) t Turn-On Rise Time V =5V, V =10V, R =3.3, 3.2 ns r GS DS L R =6 t Turn-Off DelayTime 21 ns GEN D(off) t Turn-Off Fall Time 3 ns f t I =3A, dI/dt=100A/s 14 19 rr Body Diode Reverse Recovery Time F ns Q I =3A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 3.8 2 A: The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A 12 curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv 77:: JJuullyy 22001100 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 55