AO3435 20V P-Channel MOSFET General Description Product Summary The AO3435 uses advanced trench technology to V = -20V DS provide excellent R , low gate charge and I = -3.5A (V = -4.5V) DS(ON) D GS operation with gate voltages as low as 1.5V. This R < 70m (V =- 4.5V) DS(ON) GS device is suitable for use in buck convertor R < 90m (V = -2.5V) DS(ON) GS applications. R < 110m (V = -1.8V) DS(ON) GS R < 130m (V = -1.5V) DS(ON) GS SOT23 Top View Bottom View D D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Units Symbol 10 Sec Steady State Drain-Source Voltage V -20 V DS Gate-Source Voltage V 8 V GS T =25C Continuous Drain -3.5 -2.9 A A Current T =70C I -2.7 -2.3 A A D B Pulsed Drain Current I -25 DM T =25C 1.4 1 A P W D A T =70C Power Dissipation 0.9 0.6 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 70 90 C/W R JA A Maximum Junction-to-Ambient Steady-State 100 125 C/W C Steady-State R 63 80 C/W Maximum Junction-to-Lead JL Rev. 2.0 November 2013 www.aosmd.com Page 1 of 5 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V DSS D GS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V =8V I Gate-Body leakage current 100 nA DS GS GSS V =V I =-250A V Gate Threshold Voltage -0.5 -0.65 -1 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -25 A D(ON) GS DS V =-4.5V, I =-3.5A 56 70 GS D m T =125C 80 100 J R Static Drain-Source On-Resistance V =-2.5V, I =-3.0A 70 90 m DS(ON) GS D V =-1.8V, I =-2.0A 85 110 m GS D V =-1.5V, I =-0.5A 100 130 m GS D g Forward Transconductance V =-5V, I =-3.5A 15 S DS D FS I =-1A,V =0V V Diode Forward Voltage -0.7 -1 V S GS SD I Maximum Body-Diode Continuous Current -1.4 A S DYNAMIC PARAMETERS C Input Capacitance 510 745 pF iss V =0V, V =-10V, f=1MHz C Output Capacitance 70 pF GS DS oss C Reverse Transfer Capacitance 52 pF rss V =0V, V =0V, f=1MHz R Gate resistance 18 23 GS DS g SWITCHING PARAMETERS Q Total Gate Charge 5.6 11 nC g VV ==--44..55VV,, VV ==--1100VV,, II ==--33..55AA QQ GGaattee SSoouurrccee CChhaarrggee 00..66 nnCC GGSS DDSS DD ggss Q Gate Drain Charge 1.8 nC gd t Turn-On DelayTime 11 ns D(on) V =-4.5V, V =-10V, R =3, t Turn-On Rise Time 10 ns r GS DS L R =6 t Turn-Off DelayTime 60 ns GEN D(off) t Turn-Off Fall Time 30 ns f t I =-3.5A, dI/dt=100A/s 17 49 rr Body Diode Reverse Recovery Time F ns Q I =-3.5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 4 2 A: The value of R is measured with the device mounted on 1 in FR-4 board with 2oz. copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using 300s pulse width, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. 12 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv.. 22..00 NNoovveemmbbeerr 22001133 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 55