AO4304 30V N-Channel MOSFET General Description Product Summary V 30V The AO4304 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =10V) 18A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =10V) < 6.0m DS(ON) GS and battery protection applications. R (at V = 4.5V) < 7.6m DS(ON) GS 100% UIS Tested 100% R Tested g SSOOIICC--88 DD TToopp VViieeww BBoottttoomm VViieeww DD DD DD DD GG GG SS SS SS SS Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C 18 A Continuous Drain I D Current T =70C 14 A A C Pulsed Drain Current I 200 DM C Avalanche Current I , I 35 A AS AR C Avalanche energy L=0.1mH E , E 61 mJ AS AR T =25C 3.6 A P W D B T =70C Power Dissipation 2.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 27 35 C/W R JA A D Steady-State Maximum Junction-to-Ambient 52 65 C/W Maximum Junction-to-Lead Steady-State R 12 15 C/W JL Rev 0: Oct 2010 www.aosmd.com Page 1 of 6 AO4304 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.4 1.9 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 200 A GS DS D(ON) V =10V, I =15A 4.1 6 GS D m R Static Drain-Source On-Resistance T =125C 6.5 9.5 DS(ON) J V =4.5V, I =10A 5 7.6 m GS D V =5V, I =15A g Forward Transconductance 90 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD I Maximum Body-Diode Continuous Current 5 A S DYNAMIC PARAMETERS C Input Capacitance 1275 1598 1920 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 215 308 400 pF oss GS DS C Reverse Transfer Capacitance 90 154 215 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.7 1.5 2.3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 19 24 29 nC g Q (4.5V) Total Gate Charge 8.5 11.1 14 nC g V =10V, V =15V, I =15A GS DS D Q Gate Source Charge 4 5.2 6.5 nC gs Q Gate Drain Charge 3 5.6 8 nC gd t Turn-On DelayTime ns 7.3 D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==11,, 33 nnss r GS DS L R =3 t Turn-Off DelayTime 25 ns D(off) GEN t Turn-Off Fall Time 5.3 ns f t I =15A, dI/dt=500A/s 7 9.5 12 rr Body Diode Reverse Recovery Time F ns Q I =15A, dI/dt=500A/s 14 17.5 21 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Oct 2010 www.aosmd.com Page 2 of 6