AO4312 36V N-Channel MOSFET General Description Product Summary V 36V The AO4312 uses trench MOSFET technology that is DS uniquely optimized to provide the most efficient high I (at V =10V) 23A D GS frequency switching performance.Power losses are R (at V =10V) < 4.5m DS(ON) GS minimized due to an extremely low combination of R (at V = 4.5V) < 6.2m DS(ON) GS R and Crss.In addition,switching behavior is well DS(ON) controlled with aSchottky styl soft recovery body diode. 100% UIS Tested 100% R Tested g SSOOIICC--88 DD TToopp VViieeww BBoottttoomm VViieeww DD DD DD DD GG GG SS SS SS SS Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3366 VV DDSS Gate-Source Voltage V 20 V GS T =25C 23 A Continuous Drain I D Current T =70C 18 A A C 264 Pulsed Drain Current I DM C Avalanche Current I , I 45 A AS AR C Avalanche energy L=0.1mH E , E 101 mJ AS AR T =25C 4.2 A P W D B T =70C 2.7 Power Dissipation A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s 25 30 Maximum Junction-to-Ambient C/W R JA A D Steady-State 50 60 Maximum Junction-to-Ambient C/W Maximum Junction-to-Lead Steady-State R 12 15 C/W JL Rev 0: December 2010 www.aosmd.com Page 1 of 6 AO4312 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 36 V D GS DSS V =36V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.3 1.8 2.3 V GS(th) DS GS D I On state drain current V =10V, V =5V 264 A GS DS D(ON) V =10V, I =20A 3.4 4.5 GS D m R Static Drain-Source On-Resistance T =125C DS(ON) 5.2 6.9 J V =4.5V, I =20A 4.5 6.2 m GS D V =5V, I =20A g Forward Transconductance 110 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD I Maximum Body-Diode Continuous Current 5.5 A S DYNAMIC PARAMETERS C Input Capacitance 1560 1952 2345 pF iss V =0V, V =18V, f=1MHz C Output Capacitance 475 685 890 pF oss GS DS C Reverse Transfer Capacitance 14 50 85 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.6 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 22 27.8 34 nC g Q (4.5V) Total Gate Charge 10 12.7 17 nC g V =10V, V =18V, I =20A GS DS D Q Gate Source Charge 4.3 nC gs Q Gate Drain Charge 4.7 nC gd t Turn-On DelayTime ns 7 D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1188VV,, RR ==00..99,, 33..11 nnss r GS DS L R =3 t Turn-Off DelayTime 26 ns D(off) GEN t Turn-Off Fall Time 4.5 ns f t I =20A, dI/dt=500A/s 13 17 21 rr Body Diode Reverse Recovery Time F ns Q I =20A, dI/dt=500A/s 30 38.5 47 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: December 2010 www.aosmd.com Page 2 of 6