AO4425 38V P-Channel MOSFET General Description Product Summary The AO4425 uses advanced trench technology to V (V) = -38V DS provide excellent R , and ultra-low low gate I = -14A (V = -20V) DS(ON) D GS charge with a 25V gate rating. This device is suitable R < 10m (V = -20V) DS(ON) GS for use as a load switch or in PWM applications. It is R < 11m (V = -10V) DS(ON) GS ESD protected. ESD Rating: 4000V HBM 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -38 V DS Gate-Source Voltage V 25 V GS T =25C -14 Continuous Drain A A Current T =70C I -11 A A D B Pulsed Drain Current I -50 DM T =25C 3.1 A P W D A Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 26 40 C/W R JA A Steady-State Maximum Junction-to-Ambient 50 75 C/W C Steady-State Maximum Junction-to-Lead R 14 24 C/W JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4425 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -38 V D GS DSS V =-30V, V =0V -100 DS GS I Zero Gate Voltage Drain Current nA DSS T =55C -500 J V =0V, V =20V 1 A DS GS I Gate-Body leakage current GSS V =0V, V =25V 10 A DS GS V Gate Threshold Voltage V =V I =-250A -2 -2.5 -3.5 V DS GS D GS(th) V =-10V, V =-5V I On state drain current -50 A GS DS D(ON) V =-20V, I =-14A 7.7 10 GS D m R Static Drain-Source On-Resistance T =125C 11 13.5 DS(ON) J V =-10V, I =-14A 8.8 11 m GS D g Forward Transconductance V =-5V, I =-14A 43 S DS D FS I =-1A,V =0V V Diode Forward Voltage 0.71 1 V S GS SD I Maximum Body-Diode Continuous Current 4.2 A S DYNAMIC PARAMETERS C Input Capacitance 3800 pF iss V =0V, V =-20V, f=1MHz C Output Capacitance 560 pF GS DS oss C Reverse Transfer Capacitance 350 pF rss V =0V, V =0V, f=1MHz R Gate resistance 7.5 GS DS g SWITCHING PARAMETERS Q Total Gate Charge 63 nC g V =-10V, V =-20V, I =-14A Q Gate Source Charge 14.1 nC GS DS D gs Q Gate Drain Charge 16.1 nC gd t Turn-On DelayTime 12.4 ns D(on) V =-10V, V =-20V, R =1.35, t Turn-On Rise Time 9.2 ns r GS DS L t Turn-Off DelayTime R =3 97.5 ns GEN D(off) t Turn-Off Fall Time 45.5 ns f t I =-14A, dI/dt=100A/s 35 rr Body Diode Reverse Recovery Time F ns Q I =-14A, dI/dt=100A/s 33 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. JA A The value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. -15 B: Repetitive rating, pulse width limited by junction temperature. -12.8 C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The A SOA curve provides a single pulse rating. Rev 3 : Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com