AO4438 60V N-Channel MOSFET General Description Product Summary The AO4438 uses advanced trench technology to V (V) = 60V DS provide excellent R and low gate charge. This I = 8.2A (V = 10V) DS(ON) D GS device is suitable for use as a load switch or in PWM R < 22m (V = 10V) DS(ON) GS applications. R < 27m (V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D D G G S S SS S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T =25C 8.2 Continuous Drain A A T =70C I Current 6.6 A A D B Pulsed Drain Current I 40 DM T =25C 3.1 A P W D Power Dissipation T =70C 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 24 40 C/W R JA A Maximum Junction-to-Ambient Steady-State 54 75 C/W C Steady-State R 21 30 C/W Maximum Junction-to-Lead JL Rev.5. 0: August 2013 www.aosmd.com Page 1 of 4 AO4438 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 60 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 2 2.3 3 V DS GS D GS(th) V =10V, I =8.2A 16.3 22 GS D m R Static Drain-Source On-Resistance T =125C 30 40 DS(ON) J V =4.5V, I =7.6A 20 27 m GS D g Forward Transconductance V =5V, I =8.2A 24 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V S GS SD I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 1920 2300 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 155 pF GS DS oss C Reverse Transfer Capacitance 116 pF rss V =0V, V =0V, f=1MHz R Gate resistance 0.65 0.8 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 47.6 58 nC g Q (4.5V) Total Gate Charge 24.2 30 nC g V =10V, V =30V, I =8.2A GS DS D Q Gate Source Charge 6 nC gs Q Gate Drain Charge 14.4 nC gd t Turn-On DelayTime 8.2 ns D(on) VV ==1100VV,, VV ==3300VV,, RR ==33..66,, tt TTuurrnn--OOnn RRiissee TTiimmee 55..55 nnss rr GGSS DDSS LL t Turn-Off DelayTime R =3 29.7 ns GEN D(off) t Turn-Off Fall Time 5.2 ns f t I =8.2A, dI/dt=100A/s 34 41 rr Body Diode Reverse Recovery Time F ns Q I =8.2A, dI/dt=100A/s 53 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE RReevv..55.. 00:: AAuugguusstt 22001133 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 44