AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to V -30V DS provide excellent R with low gate charge.This I (at V = -10V) -17A DS(ON) D GS device is ideal for load switch and battery protection R (at V = -10V) < 7m DS(ON) GS applications. R (at V = -4.5V) < 8m DS(ON) GS R (at V = -4V) < 9m DS(ON) GS RoHS and Halogen-Free Compliant ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D Rg D G G S SS SS S Absolute Maximum Ratings T =25C unless otherwise noted J Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -17 A Continuous Drain T =70C I Current -13 A A D C Pulsed Drain Current I -160 DM C Avalanche Current I 54 A AS C Avalanche energy L=0.1mH E 146 mJ AS T =25C 3.1 A B P W Power Dissipation D T =70C 2.0 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 31 40 C/W R JA AD Maximum Junction-to-Ambient Steady State 59 75 C/W Maximum Junction-to-Lead Steady State R 16 24 C/W JL Rev.4.0: Sep. 2015 www.aosmd.com Page 1 of 5 AO4447A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V = 0V -30 V DSS D GS V =-30V, V = 0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C -5 J V = 0V, V =16V I Gate-Body leakage current 10 A DS GS GSS V =V I =-250A V Gate Threshold Voltage -0.8 -1.3 -1.6 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -160 A D(ON) GS DS V =-10V, I =-17A 5.5 7 GS D T =125C 7 8.5 J R Static Drain-Source On-Resistance m DS(ON) V =-4.5V, I =-15A 6.5 8 GS D V =-4V, I =-13A 6.9 9 GS D g Forward Transconductance V =-5V, I =-17A 70 S FS DS D V Diode Forward Voltage I =-1A,V = 0V -0.62 -1 V SD S GS I Maximum Body-Diode Continuous Current -3 A S DYNAMIC PARAMETERS C Input Capacitance 4580 5500 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 755 pF GS DS oss C Reverse Transfer Capacitance 564 pF rss R Gate resistance V =0V, V =0V, f=1MHz 110 160 210 GS DS g SWITCHING PARAMETERS Q (-10V) Total Gate Charge 87 105 nC g QQ ((--44..55VV)) TToottaall GGaattee CChhaarrggee 4411 nnCC gg VV ==--1100VV,, VV ==--1155VV,, II ==--1177AA GGSS DDSS DD Q Gate Source Charge 12.8 nC gs Q Gate Drain Charge 17 nC gd t Turn-On DelayTime 180 ns D(on) V =-10V, V =-15V t Turn-On Rise Time 260 ns r GS DS R =-0.9, R =3 t Turn-Off DelayTime 1.2 s L GEN D(off) t Turn-Off Fall Time 9.7 s f t I =-17A, dI/dt=300A/s 32 rr Body Diode Reverse Recovery Time F 40 ns Q I =-17A, dI/dt=300A/s 77 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board wRithE F 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv..44..00:: SSeepp.. 22001155 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 55