X-On Electronics has gained recognition as a prominent supplier of AO4447A MOSFETs across the USA, India, Europe, Australia, and various other global locations. AO4447A MOSFETs are a product manufactured by Alpha & Omega. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AO4447A Alpha & Omega

AO4447A electronic component of Alpha & Omega
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Part No.AO4447A
Manufacturer: Alpha & Omega
Category: MOSFETs
Description: MOSFET P Trench 30V 17A 1.6V @ 250uA 7 mΩ @ 17A,10V SOIC-8_150mil RoHS
Datasheet: AO4447A Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5925 ea
Line Total: USD 0.59 
Availability - 2571
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2571
Ship by Wed. 08 Jan to Mon. 13 Jan
MOQ : 1
Multiples : 1
1 : USD 0.5925
10 : USD 0.4778
30 : USD 0.4289
100 : USD 0.3669
500 : USD 0.3123
1000 : USD 0.2954

1994
Ship by Mon. 30 Dec to Wed. 01 Jan
MOQ : 1
Multiples : 1
1 : USD 1.05
5 : USD 0.6916
25 : USD 0.5544
34 : USD 0.511
93 : USD 0.483
500 : USD 0.4704

   
Manufacturer
Product Category
Brand
Rohs
Package
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
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We are delighted to provide the AO4447A from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AO4447A and other electronic components in the MOSFETs category and beyond.

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AO4447A 30V P-Channel MOSFET General Description Product Summary The AO4447A uses advanced trench technology to V -30V DS provide excellent R with low gate charge.This I (at V = -10V) -17A DS(ON) D GS device is ideal for load switch and battery protection R (at V = -10V) < 7m DS(ON) GS applications. R (at V = -4.5V) < 8m DS(ON) GS R (at V = -4V) < 9m DS(ON) GS RoHS and Halogen-Free Compliant ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 D Top View Bottom View D D D Rg D G G S SS SS S Absolute Maximum Ratings T =25C unless otherwise noted J Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -17 A Continuous Drain T =70C I Current -13 A A D C Pulsed Drain Current I -160 DM C Avalanche Current I 54 A AS C Avalanche energy L=0.1mH E 146 mJ AS T =25C 3.1 A B P W Power Dissipation D T =70C 2.0 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 31 40 C/W R JA AD Maximum Junction-to-Ambient Steady State 59 75 C/W Maximum Junction-to-Lead Steady State R 16 24 C/W JL Rev.4.0: Sep. 2015 www.aosmd.com Page 1 of 5 AO4447A Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V = 0V -30 V DSS D GS V =-30V, V = 0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T = 55C -5 J V = 0V, V =16V I Gate-Body leakage current 10 A DS GS GSS V =V I =-250A V Gate Threshold Voltage -0.8 -1.3 -1.6 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -160 A D(ON) GS DS V =-10V, I =-17A 5.5 7 GS D T =125C 7 8.5 J R Static Drain-Source On-Resistance m DS(ON) V =-4.5V, I =-15A 6.5 8 GS D V =-4V, I =-13A 6.9 9 GS D g Forward Transconductance V =-5V, I =-17A 70 S FS DS D V Diode Forward Voltage I =-1A,V = 0V -0.62 -1 V SD S GS I Maximum Body-Diode Continuous Current -3 A S DYNAMIC PARAMETERS C Input Capacitance 4580 5500 pF iss C Output Capacitance V =0V, V =-15V, f=1MHz 755 pF GS DS oss C Reverse Transfer Capacitance 564 pF rss R Gate resistance V =0V, V =0V, f=1MHz 110 160 210 GS DS g SWITCHING PARAMETERS Q (-10V) Total Gate Charge 87 105 nC g QQ ((--44..55VV)) TToottaall GGaattee CChhaarrggee 4411 nnCC gg VV ==--1100VV,, VV ==--1155VV,, II ==--1177AA GGSS DDSS DD Q Gate Source Charge 12.8 nC gs Q Gate Drain Charge 17 nC gd t Turn-On DelayTime 180 ns D(on) V =-10V, V =-15V t Turn-On Rise Time 260 ns r GS DS R =-0.9, R =3 t Turn-Off DelayTime 1.2 s L GEN D(off) t Turn-Off Fall Time 9.7 s f t I =-17A, dI/dt=300A/s 32 rr Body Diode Reverse Recovery Time F 40 ns Q I =-17A, dI/dt=300A/s 77 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board wRithE F 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. RReevv..44..00:: SSeepp.. 22001155 wwwwww..aaoossmmdd..ccoomm PPaaggee 22 ooff 55

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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