AO4449 30V P-Channel MOSFET General Description Product Summary V -30V The AO4449 uses advanced trench technology to provide DS excellent RDS(ON), and ultra-low low gate charge. This I (at V =-10V) -7A D GS device is suitable for use as a load switch or in PWM R (at V =-10V) < 34m DS(ON) GS applications. R (at V = -4.5V) < 54m DS(ON) GS 100% UIS Tested 100% R Tested g SSOOIICC--88 DD TToopp VViieeww BBoottttoomm VViieeww DD DD DD DD GG GG SS SS SS SS Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C -7 A Continuous Drain I D Current T =70C -5.5 A A C Pulsed Drain Current I -40 DM C Avalanche Current I , I 23 A AS AR C Avalanche energy L=0.1mH E , E 26 mJ AS AR T =25C 3.1 A P W D B T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 31 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 59 75 C/W Maximum Junction-to-Lead Steady-State R 16 24 C/W JL Rev 3: Nov 2011 www.aosmd.com Page 1 of 6 AO4449 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 20V The AO444G9a utes-eBso addyv laenackeadg etr ecnucrrhe ntetchnology to provide excellent RDS(ON), and ultra-low low gate cha1r0g0e. ThinsA device is suitable for use as a load switch or in PWM applications. DS GS V Gate Threshold Voltage V =V I =-250A -1.3 -1.85 -2.4 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -40 A GS DS D(ON) V =-10V, I =-7A 21 34 GS D m R Static Drain-Source On-Resistance T =125C 31.5 38 DS(ON) J V =-4.5V, I =-5A 33 54 m GS D g Forward Transconductance V =-5V, I =-7A 18 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.8 -1 V S GS SD I Maximum Body-Diode Continuous Current -3.5 A S DYNAMIC PARAMETERS C Input Capacitance 760 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 140 pF oss GS DS C Reverse Transfer Capacitance 95 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.5 3.2 5 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 13.6 16 nC g Q (4.5V) Total Gate Charge 6.7 8 nC g V =-10V, V =-15V, I =-7A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3.2 nC gd t Turn-On DelayTime 8 ns D(on) VV ==--1100VV,, VV ==--1155VV,, tt TTuurrnn--OOnn RRiissee TTiimmee 66 nnss r GS DS R =2.15, R =3 t Turn-Off DelayTime L GEN 17 ns D(off) t Turn-Off Fall Time 5 ns f t I =-7A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 15 ns Q I =-7A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 9.7 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Nov 2011 www.aosmd.com Page 2 of 6