AO4468 30V N-Channel MOSFET General Description Product Summary V 30V The AO4468 combines advanced trench MOSFET DS technology with a low resistance package to provide I (at V =10V) 10.5A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =10V) < 17m DS(ON) GS and battery protection applications. R (at V = 4.5V) < 23m DS(ON) GS ESD Protected * RoHS and Halogen-Free Compliant 100% UIS Tested 100% R Tested g SOIC-8 D Top View Bottom View D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DDSS Gate-Source Voltage V 20 V GS T =25C 10.5 A Continuous Drain I D Current T =70C 8.5 A A C Pulsed Drain Current I 50 DM C Avalanche Current I , I 19 A AS AR C Avalanche energy L=0.1mH E , E 18 mJ AS AR T =25C 3.1 A P W D B T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 31 40 C/W R JA A D Steady-State Maximum Junction-to-Ambient 59 75 C/W Maximum Junction-to-Lead Steady-State R 16 24 C/W JL Rev.7.0: July 2013 www.aosmd.com Page 1 of 5 AO4468 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =16V I Gate-Body leakage current 10 A GSS DS GS V V =V I =250A Gate Threshold Voltage 1.2 1.8 2.4 V GS(th) DS GS D I On state drain current V =10V, V =5V 50 A GS DS D(ON) V =10V, I =10.5A 14 17 GS D m R Static Drain-Source On-Resistance T =125C 20 24 DS(ON) J V =4.5V, I =9A 18 23 m GS D V =5V, I =10.5A g Forward Transconductance 36 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V S GS SD I Maximum Body-Diode Continuous Current 4 A S DYNAMIC PARAMETERS C Input Capacitance 740 888 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 110 145 pF oss GS DS C Reverse Transfer Capacitance 82 115 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.5 1.1 1.7 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 15 nC g Q (4.5V) Total Gate Charge 7.5 nC g V =10V, V =15V, I =10.5A GS DS D Q Gate Source Charge 2.5 nC gs Q Gate Drain Charge 3 nC gd t Turn-On DelayTime 5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==11..4455,, 33..55 nnss r GS DS L R =3 t Turn-Off DelayTime 19 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =10.5A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 18 22 ns Q I =10.5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 9 12 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.7.0: July 2013 www.aosmd.com Page 2 of 5