AO4480 40V N-Channel MOSFET General Description Product Summary The AO4480 uses advanced trench technology to V (V) = 40V DS provide excellent R , low gate charge. It is ESD I = 14A (V = 10V) DS(ON) D GS Protected. This device is suitable for use as a low side R < 11.5m (V = 10V) DS(ON) GS switch in SMPS and general purpose applications. R < 15.5m (V = 4.5V) DS(ON) GS ESD Rating: 4KV HBM 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G G S S S S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 40 V DS Gate-Source Voltage V 20 V GS T =25C 14 Continuous Drain A A AF T =70C I Current 11 A DSM B Pulsed Drain Current I 70 DM T =25C 3.1 A P W D Power Dissipation T =70C 2.0 A B Avalanche Current I 30 A AR B Repetitive avalanche energy 0.3mH E 135 mJ AR Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 30 40 C/W R A JA Maximum Junction-to-Ambient Steady-State 59 75 C/W C Steady-State R 16 24 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4480 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250uA, V =0V 40 V D GS DSS V =32V, V =0V 1 DS GS I Zero Gate Voltage Drain Current uA DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 A GSS DS GS V Gate Threshold Voltage V =V I =250A 1 2 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 70 A GS DS D(ON) V =10V, I =14A 9 11.5 GS D m R Static Drain-Source On-Resistance T =125C 13 DS(ON) J V =4.5V, I =5A 12 15.5 m GS D g Forward Transconductance V =5V, I =14A 50 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD I Maximum Body-Diode Continuous Current 4 A S DYNAMIC PARAMETERS C Input Capacitance 1600 1920 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 320 pF GS DS oss C Reverse Transfer Capacitance 100 pF rss V =0V, V =0V, f=1MHz R Gate resistance 3.4 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 22 nC g Q (4.5V) Total Gate Charge 10.5 nC g V =10V, V =20V, I =14A GS DS D Q Gate Source Charge 4.2 nC gs Q Gate Drain Charge 4.8 nC gd t Turn-On DelayTime 3.5 ns D(on) V =10V, V =20V, R =1.5, t Turn-On Rise Time 6 ns r GS DS L t Turn-Off DelayTime R =3 13.2 ns GEN D(off) t Turn-Off Fall Time 3.5 ns f t I =14A, dI/dt=100A/s 31 rr Body Diode Reverse Recovery Time F ns Q I =14A, dI/dt=100A/s 33 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with JA T =25C. The value in any given application depends on the user s specific board design. A B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. Rev2: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com