AO4612 60V Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AO4612 uses advanced trench technology V (V) = 60V -60V DS MOSFETs to provide excellent R and low gate DS(ON) I = 4.5A (V =10V) -3.2A (V = -10V) D GS GS charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. R R DS(ON) DS(ON) < 56m (V =10V) < 105m (V = -10V) GS GS < 77m (V =4.5V) < 135m (V = -4.5V) GS GS 100% Rg tested SOIC-8 D1 D2 Top View Bottom View S2 1 8 D2 2 7 G2 D2 3 6 S1 D1 G2 G1 4 5 G1 D1 S2 S1 SOIC-8 n-channel p-channel Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 60 -60 V DS Gate-Source Voltage V 20 20 V GS Continuous Drain T =25C 4.5 -3.2 A A Current T =70C I 3.6 A -2.6 A D B Pulsed Drain Current I 20 -20 DM T =25C 2 2 A P W D Power Dissipation T =70C 1.28 1.28 A T , T Junction and Storage Temperature Range -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 48 62.5 C/W R JA A Steady-State Maximum Junction-to-Ambient 74 90 C/W C R Maximum Junction-to-Lead Steady-State 35 40 C/W JL Alpha & Omega Semiconductor, Ltd.AO4612 N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V DSS D GS V =48V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 20V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =250A 1 2.1 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 20 A D(ON) GS DS V =10V, I =4.5A 46 56 GS D m R Static Drain-Source On-Resistance T =125C 79 DS(ON) J V =4.5V, I =3A 64 77 m GS D g Forward Transconductance V =5V, I =4.5A 11 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.74 1 V SD S GS I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 450 540 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 60 pF GS DS oss C Reverse Transfer Capacitance 25 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.65 2 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 8.5 10.5 nC g Q (4.5V) Total Gate Charge 4.3 5.5 nC g V =10V, V =30V, I =4.5A GS DS D Q Gate Source Charge 1.6 nC gs Q Gate Drain Charge 2.2 nC gd t Turn-On DelayTime 4.7 7 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =6.7, 2.3 4.5 ns r GS DS L R =3 t Turn-Off DelayTime 15.7 24 ns GEN D(off) t Turn-Off Fall Time 1.9 4 ns f t I =4.5A, dI/dt=100A/s 27.5 35 rr Body Diode Reverse Recovery Time F ns Q I =4.5A, dI/dt=100A/s 32 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The value in JA A any a given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The SOA curve A provides a single pulse rating. Rev3: Oct 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE AAllpphhaa && OOmmeeggaa SSeemmiiccoonndduuccttoorr,, LLttdd..