AO4613 30V Dual P + N-Channel MOSFET General Description Product Summary The AO4613 uses advanced trench technology N-Channel P-Channel MOSFETs to provide excellent R and low V (V) = 30V -30V DS(ON) DS gate charge. The complementary MOSFETs may I = 7.2A (V =10V) -6.1A (V =10V) D GS GS be used to form a level shifted high side switch, R R DS(ON) DS(ON) and for a host of other applications. < 24m (V =10V) < 37m (V = -10V) GS GS < 40m (V =4.5V) < 60m (V = -4.5V) GS GS ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 D2 D1 Top View Bottom View Top View S2 D2 G2 D2 G2 G1 S1 D1 G1 D1 S2 S1 n-channel Pin1 p-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol Max p-channel Units Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 20 20 V GS T =25C 7.2 -6.1 Continuous Drain A A Current T =70C I 6.1 -5.1 A A D B Pulsed Drain Current I 30 -30 DM T =25C 2 2 A P W D T =70C Power Dissipation 1.44 1.44 A B Avalanche Current I 15 20 A AR B Repetitive avalanche energy 0.1mH E 11 20 mJ AR Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s n-ch 55 62.5 C/W R JA A Maximum Junction-to-Ambient Steady-State n-ch 92 110 C/W C Steady-State R n-ch 37 50 C/W Maximum Junction-to-Lead JL A t 10s Maximum Junction-to-Ambient p-ch 48 62.5 C/W R A JA Maximum Junction-to-Ambient Steady-State p-ch 84 110 C/W C Steady-State R p-ch 37 50 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd.AO4613 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 30 V DSS D GS V =24V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V =12V 10 A GSS DS GS V =V I =250A V Gate Threshold Voltage 1 2 3 V GS(th) DS GS D V =10V, V =5V I On state drain current 20 A GS DS D(ON) V =10V, I =7.2A 20 24 GS D m R Static Drain-Source On-Resistance DS(ON) T =125C 29 35 J V =4.5V, I =4A 30 40 m GS D g Forward Transconductance V =5V, I =7.2A 10 18 S DS D FS V Diode Forward Voltage I =1A 0.77 1 V SD S I Maximum Body-Diode Continuous Current 3 A S DYNAMIC PARAMETERS C Input Capacitance 522 630 pF iss C Output Capacitance V =0V, V =15V, f=1MHz 110 pF GS DS oss C Reverse Transfer Capacitance 75 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.1 3 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 11 15 nC g Q (4.5V) Total Gate Charge 5.3 7 nC g V =10V, V =15V, I =7.2A GS DS D Q Gate Source Charge 1.9 nC gs Q Gate Drain Charge 4 nC gd t Turn-On DelayTime 4.7 7 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =2.1, 4.9 10 ns r GS DS L R =3 t Turn-Off DelayTime 16.2 22 ns GEN D(off) t Turn-Off Fall Time 3.5 7 ns f t I =7.2A, dI/dt=100A/s 15.7 20 rr Body Diode Reverse Recovery Time F ns Q I =7.2A, dI/dt=100A/s 7.9 10 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The value JA A in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. R and R are equivalent terms referring to JA JL JL JC thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd.