X-On Electronics has gained recognition as a prominent supplier of AO4614B MOSFETs across the USA, India, Europe, Australia, and various other global locations. AO4614B MOSFETs are a product manufactured by Alpha & Omega. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AO4614B Alpha & Omega

AO4614B electronic component of Alpha & Omega
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Part No.AO4614B
Manufacturer: Alpha & Omega
Category: MOSFETs
Description: MOSFET DUAL PN CH 40V 5A SOIC8
Datasheet: AO4614B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.3093 ea
Line Total: USD 1.55 
Availability - 2977
Ship by Thu. 02 Jan to Tue. 07 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2977
Ship by Thu. 02 Jan to Tue. 07 Jan
MOQ : 5
Multiples : 5
5 : USD 0.3093
50 : USD 0.2474
150 : USD 0.2207
500 : USD 0.1877
3000 : USD 0.1712
6000 : USD 0.1624

1826
Ship by Tue. 24 Dec to Thu. 26 Dec
MOQ : 3
Multiples : 1
3 : USD 0.3572
25 : USD 0.3204
74 : USD 0.2455
203 : USD 0.2323

   
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We are delighted to provide the AO4614B from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AO4614B and other electronic components in the MOSFETs category and beyond.

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AO4614B 40V Dual P + N-Channel MOSFET General Description Product Summary N-Channel P-Channel The AO4614B uses advanced trench technology V (V) = 40V, -40V DS MOSFETs to provide excellent R and low gate DS(ON) I = 6A (V =10V) -5A (VGS=-10V) D GS charge. The complementary MOSFETs may be used R DS(ON) in H-bridge, Inverters and other applications. < 30m (V =10V) < 45m (VGS= -10V) GS < 38m (V =4.5V) < 63m (VGS= -4.5V) GS 100% UIS Tested 100% UIS Tested 100% Rg Tested 100% Rg Tested SOIC-8 D2 D1 Top View Bottom View Top View S2 D2 1 8 G2 D2 2 7 S1 3 6 D1 G2 G1 G1 4 5 D1 S2 S1 n-channel p-channel Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 40 -40 V DS Gate-Source Voltage V 20 20 V GS T =25C 6 -5 Continuous Drain A A Current T =70C I 5 -4 A D A B Pulsed Drain Current I 30 -30 DM B Avalanche Current I 14 -20 AR B Repetitive avalanche energy L=0.1mH E 9.8 20 mJ AR T =25C 2 2 A Power Dissipation P W D T =70C 1.28 1.28 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: n-channel and p-channel Parameter Symbol Device Typ Max Units A Maximum Junction-to-Ambient t 10s n-ch 48 62.5 C/W R JA A Maximum Junction-to-Ambient Steady-State n-ch 74 110 C/W C Steady-State R n-ch 35 50 C/W Maximum Junction-to-Lead JL A Maximum Junction-to-Ambient t 10s p-ch 48 62.5 C/W R JA A Maximum Junction-to-Ambient Steady-State p-ch 74 110 C/W C Steady-State R p-ch 35 50 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4614B N Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 40 V D GS DSS V =40V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.7 2.5 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 30 A GS DS D(ON) V =10V, I =6A 24 30 GS D R Static Drain-Source On-Resistance T =125C 36 45 m DS(ON) J V =4.5V, I =5A 30 38 GS D g Forward Transconductance V =5V, I =6A 19 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.76 1 V S GS SD I Maximum Body-Diode Continuous Current 2 A S DYNAMIC PARAMETERS C Input Capacitance 410 516 650 pF iss C Output Capacitance V =0V, V =20V, f=1MHz 82 pF GS DS oss C Reverse Transfer Capacitance 43 pF rss V =0V, V =0V, f=1MHz R Gate resistance 4.6 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 8.9 10.8 nC g Q (4.5V) Total Gate Charge V =10V, V =20V, 4.3 5.6 nC g GS DS I =6A Q Gate Source Charge D 2.4 nC gs Q Gate Drain Charge 1.4 nC gd t Turn-On DelayTime 6.4 ns D(on) V =10V, V =20V, R =3.3, t Turn-On Rise Time 3.6 ns r GS DS L t Turn-Off DelayTime R =3 16.2 ns GEN D(off) t Turn-Off Fall Time 6.6 ns f t I =6A, dI/dt=100A/s 18 24 rr Body Diode Reverse Recovery Time F ns Q I =6A, dI/dt=100A/s 10 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. 9 C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL 12 D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev2 : Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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