AO4618 40V Complementary MOSFET General Description Product Summary The AO4618 uses advanced trench technology to provide N-Channel P-Channel excellent R and low gate charge. This DS(ON) V = 40V -40V DS complementary N and P channel MOSFET configuration I = 8A (V =10V) -7A (V =-10V) D GS GS is ideal for low Input Voltage inverter applications. R R DS(ON) DS(ON) < 19m (V =10V) < 23m (VGS=-10V) GS < 27m (V =4.5V) < 30m (VGS=-4.5V) GS 100% UIS Tested 100% UIS Tested 100% R Tested 100% R Tested g g SOIC-8 D2 D1 Top View Bottom View Top View S2 1 8 D2 G2 D2 2 7 S1 3 6 D1 G2 G1 4 5 D1 G1 S2 S1 Pin1 n-channel p-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V 40 -40 V DS Gate-Source Voltage V 20 20 V GS T =25C 8 -7 Continuous Drain A I D Current T =70C 6 -5.5 A A C Pulsed Drain Current I 40 -35 DM C Avalanche Current I 15 -35 A AS C Avalanche energy L=0.1mH E 11 61 mJ AS T =25C 2 2 A P W D B Power Dissipation T =70C 1.3 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 48 62.5 C/W R A D JA Maximum Junction-to-Ambient Steady-State 74 90 C/W Maximum Junction-to-Lead Steady-State R 32 40 C/W JL Rev.1. 0: August 2013 www.aosmd.com Page 1 of 9 AO4618 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 40 V D GS DSS V =40V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.4 1.9 2.4 V GS(th) DS GS D V =10V, I =8A 15.4 19 GS D m R Static Drain-Source On-Resistance T =125C 22.5 29 DS(ON) J V =4.5V, I =4A 21 27 m GS D V =5V, I =8A g Forward Transconductance 33 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 415 pF iss V =0V, V =20V, f=1MHz C Output Capacitance 112 pF oss GS DS C Reverse Transfer Capacitance 11 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1 2.2 3.5 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 6.5 12 nC g Q (4.5V) Total Gate Charge 3 6 nC g V =10V, V =20V, I =8A GS DS D Q Gate Source Charge 1.2 nC gs Q Gate Drain Charge 1.1 nC gd t Turn-On DelayTime 4 ns D(on) t Turn-On Rise Time V =10V, V =20V, R =2.5, 3 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1155 nnss D(off) GEN t Turn-Off Fall Time 2 ns f t I =8A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 12.5 ns Q I =8A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 3.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: August 2013 www.aosmd.com Page 2 of 9