AO4813 30V Dual P-Channel MOSFET General Description Product Summary V The AO4813 combines advanced trench MOSFET -30V DS technology with a low resistance package to provide I (at V =-10V) -7.1A D GS extremely low R . This device is ideal for load switch DS(ON) R (at V =-10V) < 25m DS(ON) GS and battery protection applications. R (at V = -4.5V) < 40m DS(ON) GS 100% UIS Tested 100% R Tested g SOIC-8 D D Top View Bottom View Top View S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 G G S S Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS T =25C -7.1 A Continuous Drain I D Current T =70C -5.6 A A C Pulsed Drain Current I -40 DM C Avalanche Current I , I -27 A AS AR C Avalanche energy L=0.1mH E , E 36 mJ AS AR T =25C 2 A P W D B Power Dissipation T =70C 1.3 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 48 62.5 C/W R JA A D Maximum Junction-to-Ambient Steady-State 74 90 C/W Maximum Junction-to-Lead Steady-State R 32 40 C/W JL Rev 9: April 2011 www.aosmd.com Page 1 of 6 AO4813 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V DSS D GS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J I Gate-Body leakage current V =0V, V = 20V 100 nA DS GS GSS V Gate Threshold Voltage V =V I =-250A -1.5 -2.0 -2.5 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -40 A D(ON) GS DS V =-10V, I =-7.1A 17 25 GS D m R Static Drain-Source On-Resistance T =125C 24 33 DS(ON) J V =-4.5V, I =-5.6A 27 40 m GS D g Forward Transconductance V =-5V, I =-7.1A 24 S DS D FS V Diode Forward Voltage I =-1A,V =0V -0.75 -1 V SD S GS I Maximum Body-Diode Continuous Current -2.5 A S DYNAMIC PARAMETERS C Input Capacitance 1040 1250 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 180 pF GS DS oss C Reverse Transfer Capacitance 125 175 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2 4 6 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 19 nC g Q (4.5V) Total Gate Charge 9.6 nC g V =-10V, V =-15V, I =-7.1A GS DS D Q Gate Source Charge 3.6 nC gs Q Gate Drain Charge 4.6 nC gd t Turn-On DelayTime 10 ns D(on) t Turn-On Rise Time V =-10V, V =-15V, R =2.2, 5.5 ns r GS DS L R =3 t Turn-Off DelayTime 26 ns GEN D(off) t Turn-Off Fall Time 9 ns f t I =-7.1A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 11.5 ns Q I =-7.1A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 25 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 9: April 2011 www.aosmd.com Page 2 of 6