AO4850 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4850 uses advanced trench technology to provide V (V) = 75V DS excellent R and low gate charge. The two MOSFETs I = 3.1A (V = 10V) DS(ON) D GS may be used in H-bridge, Inverters and other applications. R < 130m (V = 10V) DS(ON) GS AO4850 is Pb-free (meets ROHS & Sony 259 R < 165m (V = 4.5V) DS(ON) GS specifications). D1 D2 1 8 S2 D2 2 7 G2 D2 S1 3 6 D1 G1 G2 G1 4 5 D1 S1 S2 SOIC-8 Absolute Maximum Ratings T =25C unless otherwise noted A Maximum Parameter Symbol 10 Sec Steady State Units Drain-Source Voltage V 75 V DS V Gate-Source Voltage 25 V GS T =25C 3.1 2.3 Continuous Drain A A Current T =70C I 2.4 1.8 A A D B Pulsed Drain Current I 15 DM T =25C 2 1.1 A P W D Power Dissipation T =70C 1.3 0.7 A B Avalanche Current I 10 A AR B Repetitive avalanche energy 0.3mH E 15 mJ AR Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 50 62.5 C/W R JA A Steady-State Maximum Junction-to-Ambient 82 110 C/W C Steady-State R 41 50 C/W Maximum Junction-to-Lead JL Alpha & Omega Semiconductor, Ltd. www.aosmd.comAO4850 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =10mA, V =0V 75 V DSS D GS V =75V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J I Gate-Body leakage current V =0V, V = 25V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1 2.3 3 V GS(th) DS GS D I On state drain current V =10V, V =5V 15 A D(ON) GS DS V =10V, I =3.1A 105 130 GS D m R T =125C Static Drain-Source On-Resistance 158 195 DS(ON) J m V =4.5V, I =2A 126 165 GS D g Forward Transconductance V =5V, I =3.1A 10 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.77 1 V SD S GS Maximum Body-Diode Continuous Current I 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 290 380 pF iss C Output Capacitance V =0V, V =30V, f=1MHz 54 pF GS DS oss C Reverse Transfer Capacitance 24 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.4 3.5 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 5.14 7 nC g Q (4.5V) Total Gate Charge 2.34 nC g =10V, V =30V, I =3.1A V GS DS D Q Gate Source Charge 0.97 nC gs Q Gate Drain Charge 1.18 nC gd t Turn-On DelayTime 4ns D(on) t V =10V, V =30V, R =9.7, Turn-On Rise Time 3.4 ns r GS DS L t Turn-Off DelayTime R =3 14.4 ns GEN D(off) t Turn-Off Fall Time 2.4 ns f t I =3.1A, dI/dt=100A/s 30.2 45 rr Body Diode Reverse Recovery Time F ns Q I =3.1A, dI/dt=100A/s 21.5 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev 1: May. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com