AO4852 60V Dual N-Channel MOSFET General Description Product Summary The AO4852 uses advanced trench technology to V (V) = 60V DS provide excellent R and low gate charge. As a pair I = 3.5A (V = 10V) DS(ON) D GS these MOSFETs operate very efficiently in Push Pull R <90m (V = 10V) DS(ON) GS and Bridge topologies. R <105m (V = 4.5V) DS(ON) GS 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D2 D1 Top View S2 1 8 D2 G2 2 D2 7 S1 3 6 D1 G1 4 5 D1 G2 G1 S2 S1 Pin1 Absolute Maximum Ratings T =25C unless otherwise noted A Maximum Parameter Symbol 10 Sec Steady State Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V 20 V GS T =25C 3.5 3 Continuous Drain A A T =70C I Current 2.8 2.4 A A D B Pulsed Drain Current I 20 DM T =25C 2 1.4 A P W D Power Dissipation T =70C 1.3 0.9 A B Avalanche Current I 8 A AR B Repetitive avalanche energy 0.3mH E 9.6 mJ AR Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 48 62.5 C/W R A JA Steady-State Maximum Junction-to-Ambient 74 90 C/W C Steady-State R 33 40 C/W Maximum Junction-to-Lead JLAO4852 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 60 V D GS DSS V =60V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.7 2.3 2.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 20 A GS DS D(ON) V =10V, I =3A 79 90 GS D m R Static Drain-Source On-Resistance T =125C 146 159 DS(ON) J V =4.5V, I =2A 86 105 m GS D g Forward Transconductance V =5V, I =3A 15 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.8 1 V S GS SD B I Pulsed Body-Diode Current 20 A SM I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 372 450 pF iss V =0V, V =30V, f=1MHz C Output Capacitance 31 pF GS DS oss C Reverse Transfer Capacitance 17 pF rss V =0V, V =0V, f=1MHz R Gate resistance 1.7 2.6 GS DS g SWITCHING PARAMETERS Q (10V) Total Gate Charge 7.1 9.2 nC g Q (4.5V) Total Gate Charge 3.6 nC g V =10V, V =30V, I =3A GS DS D Q Gate Source Charge 1 nC gs Q Gate Drain Charge 2 nC gd t Turn-On DelayTime 4.1 5.3 ns D(on) t Turn-On Rise Time V =10V, V =30V, R =10, 2.1 ns r GS DS L R =3 t Turn-Off DelayTime 15 ns GEN D(off) t Turn-Off Fall Time 2.1 ns f t I =3A, dI/dt=100A/s 23.4 29 rr Body Diode Reverse Recovery Time F ns Q I =3A, dI/dt=100A/s 23.2 nC rr Body Diode Reverse Recovery Charge F 2 A: The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL D. The static characteristics in Figures 1 to 6 are obtained using < 300 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev1: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. www.aosmd.com