AO6601 30V Complementary MOSFET General Description Product Summary The AO6601 uses advanced trench technology to N-Channel P-Channel provide excellent R and low gate charge. The DS(ON) V = 30V -30V DS complementary MOSFETs form a high-speed power I = 3.4A (V =10V) -2.3A (V =-10V) D GS GS inverter, suitable for a multitude of applications. R R DS(ON) DS(ON) < 60m (V =10V) < 115m (VGS=-10V) GS < 70m (V =4.5V) < 150m (VGS=-4.5V) GS < 90m (V =2.5V) < 200m (VGS=-2.5V) GS TSOP6 D1 D2 Top View Bottom View Top View G1 1 6 D1 S2 2 5 S1 G1 G2 G2 3 D2 4 S1 S2 Pin1 n-channel p-channel Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxx nn--cchhaannnneell MMaaxx pp--cchhaannnneell UUnniittss Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 12 12 V GS T =25C 3.4 -2.3 A Continuous Drain I D T =70C Current 2.7 -1.8 A A C Pulsed Drain Current I 20 -15 DM T =25C 1.15 1.15 A P W D B T =70C Power Dissipation 0.73 0.73 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 78 110 C/W R A D JA Maximum Junction-to-Ambient Steady-State 106 150 C/W Maximum Junction-to-Lead Steady-State R 64 80 C/W JL Rev 6: Dec. 2012 www.aosmd.com Page 1 of 9 AO6601 N-Channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V BV Drain-Source Breakdown Voltage 30 V DSS D GS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current DSS A T =55C 5 J I Gate-Body leakage current V =0V, V =12V 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 0.5 1 1.5 V GS(th) DS GS D V =10V, V =5V I On state drain current 20 A D(ON) GS DS V =10V, I =3.4A 46 60 GS D m T =125C 73 88 J R Static Drain-Source On-Resistance DS(ON) V =4.5V, I =3A 50 70 m GS D V =2.5V, I =2A 62 90 m GS D V =5V, I =3.4A g Forward Transconductance 14 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V S GS SD I Maximum Body-Diode Continuous Current 1.5 A S DYNAMIC PARAMETERS C Input Capacitance 185 235 285 pF iss V =0V, V =15V, f=1MHz C Output Capacitance GS DS 25 35 45 pF oss C Reverse Transfer Capacitance 10 18 25 pF rss V =0V, V =0V, f=1MHz R Gate resistance 0.9 1.8 2.7 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 10 12 nC g Q (4.5V) Total Gate Charge 4.7 6 nC g V =10V, V =15V, I =3.4A GS DS D Q Gate Source Charge 0.95 nC gs Q Gate Drain Charge 1.6 nC gd t Turn-On DelayTime 3.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==44..44,, 11..55 nnss rr GGSS DDSS LL R =3 t Turn-Off DelayTime 17.5 ns D(off) GEN t Turn-Off Fall Time 2.5 ns f t I =3.4A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 8.5 12 ns Q I =3.4A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 2.55 4 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 6: Dec. 2012 www.aosmd.com Page 2 of 9