AO7400 30V N-Channel MOSFET General Description Product Summary V 30V The AO7400 uses advanced trench technology to DS provide excellent R , low gate charge and DS(ON) I (at V =10V) 1.7A D GS operation with gate voltages as low as 2.5V, in the R (at V =10V) < 55m DS(ON) GS small SOT323 footprint. It can be used for a wide R (at V =4.5V) < 65m DS(ON) GS variety of applications, including load switching, low R (at V =2.5V) < 85m DS(ON) GS current inverters and low current DC-DC converters. SC-70 (SOT-323) D Top View Bottom View D D G S G S G S Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 30 V DS Gate-Source Voltage V 12 V GS T =25C 1.7 A Continuous Drain I D T =70C Current 1.3 A A C Pulsed Drain Current I 15 DM T =25C 0.35 A P W D B T =70C Power Dissipation 0.22 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 300 360 C/W R A D JA Maximum Junction-to-Ambient Steady-State 340 425 C/W Maximum Junction-to-Lead Steady-State R 280 320 C/W JL Rev 5: May 2011 www.aosmd.com Page 1 of 5 AO7400 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =12V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 0.5 1 1.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 15 A GS DS D(ON) V =10V, I =1.7A 45 55 GS D m T =125C 70 84 J R Static Drain-Source On-Resistance DS(ON) V =4.5V, I =1.5A 50 65 m GS D V =2.5V, I =1A 61 85 m GS D g Forward Transconductance V =5V, I =1.7A 14 S DS D FS V Diode Forward Voltage I =1A,V =0V 0.75 1 V SD S GS I Maximum Body-Diode Continuous Current 1.5 A S DYNAMIC PARAMETERS C Input Capacitance 185 235 285 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 25 35 45 pF GS DS oss C Reverse Transfer Capacitance 10 18 25 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.1 4.3 6.5 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 10 12 nC g Q (4.5V) Total Gate Charge 4.7 nC g V =10V, V =15V, I =1.7A GS DS D Q Gate Source Charge 0.95 nC gs Q Gate Drain Charge 1.6 nC gd t Turn-On DelayTime 3.5 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =8, 1.5 ns r GS DS L R =3 t Turn-Off DelayTime 17.5 ns GEN D(off) t Turn-Off Fall Time 2.5 ns f t I =1.7A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 8.5 11 ns Q I =1.7A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 2.6 3.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150C. The SOA curve provides a single pulse ratin g. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: May 2011 www.aosmd.com Page 2 of 5