AOD254 150V N-Channel MOSFET General Description Product Summary V 150V The AOD254 uses trench MOSFET technology that is DS uniquely optimized to provide the most efficient high I (at V =10V) 30A D GS frequency switching performance.Power losses are R (at V =10V) < 46m DS(ON) GS minimized due to an extremely low combination of R (at V =4.5V) < 53m DS(ON) GS R and Crss.In addition,switching behavior is well DS(ON) controlled with a soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. 100% UIS Tested 100% R Tested g TO252 DPAK D Top View Bottom View D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V 150 V DS Gate-Source Voltage V 20 V GS T =25C 30 C Continuous Drain I D Current T =100C 22 A C C Pulsed Drain Current I 60 DM T =25C 4.5 A Continuous Drain I A DSM Current T =70C 3.6 A C Avalanche Current I 12 A AS C Avalanche energy L=0.1mH E 7 mJ AS T =25C 115 C P W D B Power Dissipation T =100C 57.5 C T =25C 2.5 A P W DSM A T =70C Power Dissipation 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 15 20 C/W R JA A D Steady-State Maximum Junction-to-Ambient 41 50 C/W Maximum Junction-to-Case Steady-State R 1 1.3 C/W JC Rev.1.0: April 2014 www.aosmd.com Page 1 of 6 AOD254 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 150 V D GS DSS V =150V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V Gate Threshold Voltage V =V I =250A 1.7 2.2 2.7 V GS(th) DS GS D I On state drain current V =10V, V =5V 60 A GS DS D(ON) V =10V, I =20A 37 46 GS D m R Static Drain-Source On-Resistance T =125C 74 90 DS(ON) J V =4.5V, I =20A 40 53 m GS D g Forward Transconductance V =5V, I =20A 55 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.7 1 V S GS SD G I Maximum Body-Diode Continuous Current 46 A S DYNAMIC PARAMETERS C Input Capacitance 2150 pF iss V =0V, V =75V, f=1MHz C Output Capacitance 110 pF oss GS DS C Reverse Transfer Capacitance 4 pF rss R Gate resistance V =0V, V =0V, f=1MHz 2.3 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 27 40 nC g Q (4.5V) Total Gate Charge 12 17 nC g V =10V, V =75V, I =20A GS DS D Q Gate Source Charge 7 nC gs Q Gate Drain Charge 3 nC gd t Turn-On DelayTime 9 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==7755VV,, RR ==33..7755,, 1100 nnss r GS DS L R =3 t Turn-Off DelayTime 29 ns GEN D(off) t Turn-Off Fall Time 4 ns f t I =20A, dI/dt=500A/s rr Body Diode Reverse Recovery Time F 51 ns Q I =20A, dI/dt=500A/s nC rr Body Diode Reverse Recovery Charge F 434 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initial T =25 C. J D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2014 www.aosmd.com Page 2 of 6