AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary V -30V The AOD403/AOI403 uses advanced trench technology to DS provide excellent R , low gate charge and low gate DS(ON) I (at V = -20V) -70A D GS * resistance. With the excellent thermal resistance of the R (at V = -20V) < 6.2m (< 6.7m ) DS(ON) GS DPAK/IPAK package, this device is well suited for high * R (at V = -10V) < 8m (< 8.5m ) DS(ON) GS current load applications. 100% UIS Tested 100% R Tested g TO252 TO251A DPAK IPAK D Top View Bottom View Top View Bottom View D D G S G G S S D D S S G G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Units Symbol Drain-Source Voltage V -30 V DS GGaattee--SSoouurrccee VVoollttaaggee VV 2255 VV GGSS T =25C -70 Continuous Drain C I D G Current T =100C -55 A C C Pulsed Drain Current I -200 DM T =25C -15 A Continuous Drain I A DSM T =70C Current -12 A C Avalanche Current I , I -50 A AS AR C Avalanche energy L=0.1mH E , E 125 mJ AS AR T =25C 90 C P W D B T =100C Power Dissipation 45 C T =25C 2.5 A P W DSM A T =70C Power Dissipation 1.6 A Junction and Storage Temperature Range T , T -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 16 20 C/W R A D JA Maximum Junction-to-Ambient Steady-State 41 50 C/W Maximum Junction-to-Case Steady-State R 0.9 1.6 C/W JC * package TO251A Rev.9.0: July 2013 www.aosmd.com Page 1 of 6AOD403/AOI403 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -30 V D GS DSS V =-30V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 25V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =-250A Gate Threshold Voltage -1.5 -2.5 -3.5 V GS(th) DS GS D I On state drain current V =-10V, V =-5V -200 A GS DS D(ON) V =-20V, I =-20A 5.1 6.2 GS D m TO252 T =125C 7.6 9.2 J V =-10V, I =-20A GS D 6.2 8 m TO252 R Static Drain-Source On-Resistance DS(ON) V =-20V, I =-20A GS D 5.6 6.7 m TO251A VGS=-10V, ID=-20A 6.7 8.5 m TO251A V =-5V, I =-20A g Forward Transconductance 42 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.7 -1 V S GS SD G I Maximum Body-Diode Continuous Current -70 A S DYNAMIC PARAMETERS C Input Capacitance 2310 2890 3500 pF iss V =0V, V =-15V, f=1MHz C Output Capacitance 410 585 760 pF oss GS DS C Reverse Transfer Capacitance 280 470 660 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.9 3.8 5.7 g GS DS SWITCHING PARAMETERS QQ TToottaall GGaattee CChhaarrggee 4400 5511 6611 nnCC g V =-10V, V =-15V, I =-20A Q Gate Source Charge 10 12 14 nC GS DS D gs Q Gate Drain Charge 10 16 22 nC gd t Turn-On DelayTime 16 ns D(on) t Turn-On Rise Time 12 ns V =-10V, V =-15V, R =0.75, r GS DS L R =3 t Turn-Off DelayTime 45 ns D(off) GEN t Turn-Off Fall Time 22 ns f t I =-20A, dI/dt=100A/s 14 rr Body Diode Reverse Recovery Time F 18 22 ns Q I =-20A, dI/dt=100A/s 9 nC rr Body Diode Reverse Recovery Charge F 11 13 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150 C. The value in any given application depends DSM JA on the user s specific board design, and the maximum temperature of 175 C may be used if the PCB allows it. B. The power dissipation P is based on T =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175 C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25 C. J D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.9.0: July 2013 www.aosmd.com Page 2 of 6