AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET V 700V 150 DS process that is designed to deliver high levels of I (at V =10V) 1.3A D GS performance and robustness in popular AC-DC R (at V =10V) < 9 DS(ON) GS applications. By providing low R , C and C along with DS(on) iss rss guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. 100% UIS Tested 100% R Tested g TO252 TO251A TO251 DPAK D IPAK Top View Bottom View Top View Bottom View Top View Bottom View D D G G S G S S D S G S G D D D S S G G AOD1N60 AOI1N60 AOU1N60 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS T =25C 1.3 Continuous Drain C I D B Current T =100C 0.8 A C C Pulsed Drain Current I 4 DM C Avalanche Current I 1 A AR C Repetitive avalanche energy E 15 mJ AR H Single pulsed avalanche energy E 30 mJ AS Peak diode recovery dv/dt dv/dt 5 V/ns T =25C 45 W C P D B o o Power Dissipation Derate above 25 C 0.36 W/ C Junction and Storage Temperature Range T , T -50 to 150 C J STG Maximum lead temperature for soldering T 300 C purpose, 1/8 from case for 5 seconds L Thermal Characteristics Parameter Symbol Typical Maximum Units A,G Maximum Junction-to-Ambient R 45 55 C/W JA A R Maximum Case-to-sink - 0.5 C/W CS D,F Maximum Junction-to-Case R 2.3 2.8 C/W JC Rev 5: Aug 2011 www.aosmd.com Page 1 of 6 AOD1N60/AOU1N60/AOI1N60 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS I =250A, V =0V, T =25C 600 D GS J BV Drain-Source Breakdown Voltage DSS I =250A, V =0V, T =150C 700 V D GS J BV DSS o Zero Gate Voltage Drain Current ID=250A, VGS=0V 0.6 V/ C /TJ V =600V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS V =480V, T =125C 10 DS J I Gate-Body leakage current V =0V, V =30V 100 GSS DS GS n V V =5V,I =250A Gate Threshold Voltage 3 4.1 4.5 V GS(th) DS D R Static Drain-Source On-Resistance V =10V, I =0.65A 7.5 9 DS(ON) GS D g Forward Transconductance V =40V, I =0.65A 0.9 S DS D FS I =1A,V =0V V Diode Forward Voltage 0.65 1 V SD S GS I Maximum Body-Diode Continuous Current 1 A S I Maximum Body-Diode Pulsed Current 4 A SM DYNAMIC PARAMETERS C Input Capacitance 105 130 160 pF iss V =0V, V =25V, f=1MHz C Output Capacitance GS DS 12 14.5 18 pF oss C Reverse Transfer Capacitance 1.5 1.8 2.2 pF rss V =0V, V =0V, f=1MHz R Gate resistance 2.9 3.5 5.3 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 6.1 8 nC g V =10V, V =480V, I =1A Q Gate Source Charge GS DS D 1.3 2 nC gs Q Gate Drain Charge 3.1 4 nC gd t Turn-On DelayTime 10 13 ns D(on) t Turn-On Rise Time V =10V, V =300V, I =1A, 6.7 13 ns r GS DS D R =25 tt TTuurrnn--OOffff DDeellaayyTTiimmee G 2200 2266 nnss G DD((ooffff)) t Turn-Off Fall Time 11.5 23 ns f t I =1.3A,dI/dt=100A/s,V =100V 114 137 rr Body Diode Reverse Recovery Time F DS ns Q I =1.3A,dI/dt=100A/s,V =100V 0.63 0.76 C rr Body Diode Reverse Recovery Charge F DS A. The value of R is measured with the device in a still air environment with T =25 C. JA A B. The power dissipation P is based on T =150 C in a TO252 package, using junction-to-case thermal resistance, and is more useful in D J(MAX) setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedance from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. J(MAX) 2 G.These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A H. L=60mH, I =1A, V =150V, R =10 , Starting T =25 C AS DD G J THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Aug 2011 www.aosmd.com Page 2 of 6