AON3611 30V Complementary MOSFET General Description Product Summary N-channel P-channel The AON3611 uses advanced trench technology to provide excellent R and low gate charge. The DS(ON) V (V) = 30V V (V) = -30V DS DS complementary MOSFETs may be used in inverter and I = 5A I = -6A (V = 10V) D D GS other applications. R < 50m R < 38m (V = 10V) DS(ON) DS(ON) GS R < 70m R < 62m (V = 4.5V) DS(ON) DS(ON) GS D1 D2 DFN 3x3 Top View Bottom View Top View D2 S2 G2 D2 D1 S1 G1 G1 D1 G2 S2 S1 P-channel N-channel Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Max N-channel Max P-channel Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 --3300 VV DDSS Gate-Source Voltage V 20 20 V GS T =25C 5 -6 A Continuous Drain I D T =70C Current 3.8 -4.7 A A C Pulsed Drain Current I 20 -30 DM T =25C 2.1 2.5 A P W D B T =70C Power Dissipation 1.3 1.6 A Junction and Storage Temperature Range T , T -55 to 150 -55 to 150 C J STG Thermal Characteristics: N-channel Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 50 60 C/W R A D JA Maximum Junction-to-Ambient Steady-State 80 98 C/W Maximum Junction-to-Lead Steady-State R 48 58 C/W JL Thermal Characteristics: P-channel Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 40 50 C/W R JA A D Steady-State Maximum Junction-to-Ambient 70 85 C/W Maximum Junction-to-Lead Steady-State R 38 46 C/W JL Rev.2.0: May 2013 www.aosmd.com Page 1 of 9 AON3611 N-channel Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V , I =250A Gate Threshold Voltage 1.5 2 2.5 V GS(th) DS GS D I On state drain current V =10V, V =5V 20 A GS DS D(ON) V =10V, I =5A 40 50 GS D m R Static Drain-Source On-Resistance T =125C 64 80 DS(ON) J V =4.5V, I =3A 53 70 m GS D V =5V, I =5A g Forward Transconductance 11 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.79 1 V S GS SD I Maximum Body-Diode Continuous Current 1.5 A S DYNAMIC PARAMETERS C Input Capacitance 170 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 35 pF oss GS DS C Reverse Transfer Capacitance 23 pF rss R Gate resistance V =0V, V =0V, f=1MHz 1.5 2.0 3.0 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge 4.05 10 nC g Q (4.5V) Total Gate Charge 2 6 nC g V =10V, V =15V, I =5A GS DS D Q Gate Source Charge 0.55 nC gs Q Gate Drain Charge 1 nC gd t Turn-On DelayTime 4.5 ns D(on) tt TTuurrnn--OOnn RRiissee TTiimmee VV ==1100VV,, VV ==1155VV,, RR ==33,, 11..55 nnss r GS DS L R =3 t Turn-Off DelayTime 18.5 ns GEN D(off) t Turn-Off Fall Time 15.5 ns f t I =5A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 7.5 ns Q I =5A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 2.5 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The qJA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. qJA qJL E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.2.0: May 2013 www.aosmd.com Page 2 of 9